IXFR25N90 Allicdata Electronics
Allicdata Part #:

IXFR25N90-ND

Manufacturer Part#:

IXFR25N90

Price: $ 14.30
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 900V 25A ISOPLUS247
More Detail: N-Channel 900V 25A (Tc) Through Hole ISOPLUS247™
DataSheet: IXFR25N90 datasheetIXFR25N90 Datasheet/PDF
Quantity: 1000
30 +: $ 13.00110
Stock 1000Can Ship Immediately
$ 14.3
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Description

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The IXFR25N90 is an advanced type of power metal-oxide-semiconductor field-effect-transistor (MOSFET), and it is typically used for various power electronic applications. It is composed of a single large MOSFET in a TO-220 package. The IXFR25N90 is capable of high-current and high-voltage applications, and it features advanced operational features such as high-voltage operation and fast switching speeds.

The IXFR25N90 is a power-switching device, and it is usually used in power supply applications such as dc-to-dc converters and chargers of batteries. This type of transistor is designed to operate over wide voltage and current ranges, and the IXFR25N90 is specifically optimized for applications that require high switching speeds and high load current capability. One of the most notable features of the IXFR25N90 is its low gate-charge, which ensures fast switching speed and reduced system noise. Moreover, the IXFR25N90 features a low on-state resistance, which allows for higher efficiency in power supply applications.

The IXFR25N90 features a unique architecture which includes both an internal bootstrap circuit and a body diode. This ensures low internal drain-source voltage drop, resulting in improved efficiency in power supply applications. The IXFR25N90 also offers a high frequency operation, which is useful in high-frequency switching applications such as dc-to-dc converters. In addition, its internal gate structure provides additional gate control and protection, which is essential for high-power applications.

The IXFR25N90 has a low-cost, high-performance package design, and it is designed to operate at high temperature levels. Its maximum operation temperature is 150°C, and its maximum power dissipation rating is 40W. The IXFR25N90 also helps to reduce system cost due to its low-cost package and efficient design. Furthermore, it features low-noise operation and requires no external components for gate control.

In conclusion, the IXFR25N90 is an advanced power MOSFET with versatile operational features and high performance. Its wide operational range and excellent efficiency in high-power applications make it an ideal choice for various power supply applications. The IXFR25N90’s low cost, low noise operation, high frequency operation, and integrated gate protection make it a reliable power switching solution for various power electronic applications.

The specific data is subject to PDF, and the above content is for reference

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