IXFR26N50Q

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This article explores the application field and working principle of the IXFR26N50Q, which falls into the Transistors-FETs and MOSFETs-Single category.

As the number at the end of the device\'s part number suggests, the IXFR26N50Q is a single-device MOSFET. It is built on a family of 650V CoolMOS power transistors, making it suitable for use in a wide variety of power-related applications. It has an on-state resistance of only 0.27 Ohms and a maximum current rating of 55 Amps, and is designed to be used at a load voltage of up to 500V. This makes it an ideal choice for power supplies, motor drives, and solar inverters, among other applications.

At a high level, the IXFR26N50Q works by modulating the flow of current through the device due to a voltage difference across its electrical connections (drain and source terminals). This is made possible through the use of metal-oxide semiconductor field-effect transistors (MOSFETs), which utilize a capacitively coupled semiconductor layer – commonly referred to as a ‘gate’ – to control the flow of current through the device. The voltage applied to the gate creates an electrical field, which attracts electrons and allows them to flow through the metal-oxide barrier, allowing current to pass through the device.

The IXFR26N50Q is designed to be used in ‘switching’ applications, which require the device to switch the current flow on and off rapidly, with low flow resistance when the current is flowing. To achieve this, the device uses a switching behavior called ‘pulsed current mode’. This mode is optimized to minimize gate transconductance and charge, allowing it to switch quickly and efficiently.

The IXFR26N50Q also has a variety of features that make it well-suited for applications where high-frequency switching is required. It has a maximum switching frequency of 400 kHz, and features an avalanche ruggedness rating of 4.3J, making it resistant to the potentially destructive effects of electrostatic discharge.

Overall, the IXFR26N50Q is a versatile and reliable power transistor, ideal for use in a wide variety of power-related applications. It has a low on-state resistance and is capable of switching current rapidly and efficiently, making it a versatile choice for high-frequency switching. It is resistant to electrostatic discharge, which helps to ensure reliable operation in harsh environments.

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