IXFR15N100Q

Series:	*
Part Status:	Obsolete

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<p>When it comes to applications involving field effect transistors, the IXFR15N100Q stands out for its overall ease of use and broad range of features. This new FET, otherwise known as a metal oxide semiconductor field effect transistor or MOSFET, is designed to meet the demands of a wide variety of operations while providing superior performance. The IXFR15N100Q is a single FET, meaning that the device consists of just one transistor, as opposed to integrated circuits which comprise several FETs and other components.</p><p>The IXFR15N100Q has several applications, including high-speed switching, voltage amplification, linear/logic level conversion, RF/microwave power amplifiers, and electrostatic discharge protection devices. It is commonly used in switching power supplies, DC-DC converters, and battery chargers. It is also widely used in various consumer and industrial electronic products, including communications equipment, automotive systems, and consumer electronic devices.</p><p>One key element that sets this FET apart from others is its relatively low gate charge, which helps make circuit design easier. The device also features a low RDS(on) at high temperatures, allowing for improved performance and higher efficiency in the finished products. Additionally, the IXFR15N100Q boasts excellent power cycling resistance and superior avalanche energy withstand capability.</p><p>The working principle of the IXFR15N100Q is quite simple yet effective. The gate-source voltage applied across the transistor\'s channel is responsible for the flow of electrons. When the gate-source voltage is high, electrons will flow freely through the channel, creating a conducting path and enabling current to flow through the transistor. When the gate-source voltage is low, electrons cannot flow through the transistor\'s channel and current ceases to exist.</p><p>Compared with other FETs, this device is able to operate at extremely low gate-source voltages, enabling direct control of the device without the need for additional voltage amplifiers. This makes the device ideal for switching applications, as it allows the device to react quickly to changing input conditions. At the same time, the device is designed to present a very low on-state resistance (RDS(on)), making it suitable for high-power circuits.</p><p>The IXFR15N100Q is also designed for a wide range of operating frequencies, from DC to well beyond 10 kHz. This makes the device a great choice for high-speed switching applications, including RF/microwave power amplifiers, voltage amplification, and electrostatic discharge protection.</p> <p>The IXFR15N100Q is a versatile and powerful device that can be used in a wide variety of applications. Its combination of low gate charge, low RDS(on), and high frequency range make it ideal for high-power, high-speed circuit designs. At the same time, its relatively simple operating principle make it easy to use and understand.</p>

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