IXFR26N60Q

Vgs(th) (Max) @ Id:	4.5V @ 4mA
Package / Case:	ISOPLUS247™
Supplier Device Package:	ISOPLUS247™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	310W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	200nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	250 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	23A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IXFR26N50Q is a high voltage and current insulated gate field-effect transistor (MOSFET). In this article, we will discuss the field of application and the working principle of the IFRXR26N50Q.The IXFR26N50Q is most commonly used in power supplies, pulse power applications, audio amplifiers and DC-to-DC converters. The MOSFET has a maximum blocking voltage of 600V and a maximum current rating of 26A. It is also equipped with an insulated gate capable of handling up to 30V. This allows the device to be used safely in systems that require higher voltage and/or current levels.In order for the IXFR26N50Q to function properly, it must first be installed properly in a circuit. The gate of the MOSFET is connected to the source and the drain is connected to the load. When a voltage is applied to the gate, the current flow is opened between the source and the drain. The voltage applied to the gate must be of sufficient magnitude to open this current flow, and the current to be passed through the device must be less than the maximum rating of the device.The working principle of the IXFR26N50Q is based on the gate-source region of the structure. A voltage applied to the gate creates a significant electric field inside the channel between the source and drain. This electric field is sufficient to open the connection between the source and drain and therefore allows the current to flow. The more voltage applied to the gate, the more current which can flow.The IXFR26N50Q also has a good immunity to inverse current, which is important for applications where large and/or transient currents can occur. The device also has a low on-state resistance and a low operating temperature, which makes it suitable for use in high power applications.In conclusion, the IXFR26N50Q is an excellent choice for applications that require high blocking voltages and high current ratings. The device is easy to install and can be used safely in systems requiring high voltages and/or current levels. The working principle is based on an electric field created inside the channel between the source and drain, making it very reliable and efficient in operation.

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