Vgs(th) (Max) @ Id:	4V @ 8mA
Package / Case:	ISOPLUS247™
Supplier Device Package:	ISOPLUS247™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	416W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	270nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	240 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	28A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IXFR34N80 is a small signal FET transistor type in small signal field-effect transistor family. This includes other small signal FET transistor types such as IXFR45N90, IXFR37N90 and IXFR28N90. It used in various high-frequency applications and is compatible with most types of signal processing technologies. This article focuses on the IXFR34N80 application field, working principle and key features.

IXFR34N80 Application Field and Working Principle

IXFR34N80 can be used as a small signal amplifier for a variety of signal processing applications. It is also an ideal choice for applications such as signal filtering, signal buffering, mixer, pre-amplifier and radio communications.The working principle of IXFR34N80 is based on the formation of a voltage-controlled current path between two electrodes. A small input voltage applied across the gate and source results in a change in the drain current, allowing current flow in the source-drain direction. This type of transistor is controlled through the gate voltage and can be used to amplify signals.A key feature of IXFR34N80 is its low input capacitance. This is the capacitance between the gate and the source and is an important parameter for any small signal amplifier. As the input capacitance is low, IXFR34N80 is suitable for wide frequency range applications.Another key feature of IXFR34N80 is its high transconductance. Transconductance is the ratio of the change in drain current to the change in gate voltage. This parameter is affected by the width/length ratio and channel doping concentration. IXFR34N80 provides higher transconductance compared to other small signal FET transistors, making it suitable for applications with wide frequency range and low noise.

Pros and Cons

IXFR34N80 has several advantages. It has a low noise figure and high transconductance, making it suitable for applications such as radio communications. Also, its low input capacitance makes it suitable for wide frequency range applications.However, there are some drawbacks with IXFR34N80. Firstly, it is quite sensitive to temperature variation. As such, it should not be used for applications that require temperature stability, such as automotive electronics. Secondly, it has relatively low breakdown voltage compared to other small signal FET transistors.

Conclusion

In conclusion, IXFR34N80 is a small signal FET transistor type in the small signal field-effect transistor family. It is suitable for high-frequency applications and is compatible with most types of signal processing technologies. Its low noise figure and high transconductance make it suitable for applications such as radio communications and small signal amplifier applications. However, it is quite sensitive to temperature variation and has relatively low breakdown voltage compared to other small signal FET transistors.

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