IXFR75N10Q

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFR75N10Q is a field-effect transistor (FET) which belongs in the group of metal-oxide-semiconductor FETs (MOSFETs) and its classification as single is appropriate. It is primarily used for power applications and assisting in voltage-controlling signals in areas such as digital-power and automotive design.

The IXFR75N10Q plays a vital role in controlling voltage and current levels in power systems, which helps to reduce energy waste and inefficiencies. As a single FET, IXFR75N10Q offers enhanced controllability and higher power handling capability compared to other types of FETs.

In principle, the operating principle of the IXFR75N10Q consists of two gates which are used to control the channel between a source and drain. A gate voltage, connected to drain and source, is used to control the flow of current through the channel. Typically, this gate voltage is provided by a voltage regulator or other type of controller.

The drain-to-source voltage (Vds) is an important concept for the operational behavior of the IXFR75N10Q. When Vds is increased, the current through the device increases and eventually reaches the rated maximum. After this point, the device is no longer capable of controlling current. This maximum current is the maximal safe operating point of the IXFR75N10Q, and can vary depending on the device in use.

In addition to providing voltage regulation, the IXFR75N10Q is also used for power amplification. In this regard, the device is used to transfer power from a source to a load with minimal losses. In this case, the gate voltage acts as a controlling agent, allowing the device to properly regulate the output power and providing greater efficiency.

The IXFR75N10Q offers significant advantages over other types of FETs. It is capable of operating over a wide range of voltages and temperatures, which makes it suitable for a wide range of applications. Furthermore, the device is highly reliable and efficient, which helps reduce energy consumption and improves energy efficiency.

To summarize, the IXFR75N10Q is a single metal-oxide-semiconductor field-effect transistor (MOSFET) used for power applications. It operates through the principle of two gates, which are used to control the channel between a source and drain. It can be used for voltage-regulation and power-amplification, along with providing greater efficiency and reliability. Furthermore, it offers wide temperature and voltage tolerances, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference