IXFR32N80P Discrete Semiconductor Products

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The IXFR32N80P is a N-Channel Enhancement Mode Power MOSFET. It was designed for high voltage applications, and is made for a wide range of platforms. This MOSFET is suitable for use in low frequency power conversion such as high frequency switching, low frequency AC to DC, synchronous rectifier, multiple voltage level switch applications.This device features 75V Drain to Source voltage and 80A Continuous Drain Current at 25 ℃. It is made from high-voltage silicon and comes in a TO−247 package.

IXFR32N80P Application Field

The IXFR32N80P is suitable for power supplies applications such as switching mode power supply (SMPS), computer, washing machines, refrigerators, air conditioners, solar invertors, DC-DC converters, motor control, and high voltage synchronous rectifier applications.

Due to its high drain to source voltage rating and continuous drain current rating, this MOSFET is suitable for continuous conduction in multiple voltage level switch applications. The device is also suitable for high frequency switching applications. It can withstand a drain voltage up to 300V.

The IXFR32N80P MOSFET is an ideal choice for automotive applications such as driving motors, lamps, air conditioning and fuel injection control. It is also suitable for high-power switching and rectifying applications, and is suitable for high voltage applications up to 570V.

IXFR32N80P Working Principle

The IXFR32N80P operates on an enhancement mode, in which an electrical charge is used to increase the conducting ability of the MOSFET. When a voltage is applied to the gate of the IXFR32N80P, the capacitance of the insulator between the gate and source increases, increasing the conductivity of the device. When the voltage is removed, theconductivity of the device decreases.

The IXFR32N80P is optimized for low resistance, high current and high frequency switching. The device features an ultra low on-resistance of 0.251Ω and can handle up to 80A of continuous current. The device also features a fast switching speed of 5 nanoseconds, allowing for high frequency applications. The IXFR32N80P also has a low body diode reverse recovery time, allowing for lower losses in switching applications.

The IXFR32N80P is protected against over-temperature and over-voltage by its inbuilt thermal shutdown circuit and its on-chip thermal shutdown protection.

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