IXFR140N20P Allicdata Electronics
Allicdata Part #:

IXFR140N20P-ND

Manufacturer Part#:

IXFR140N20P

Price: $ 8.61
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 90A ISOPLUS247
More Detail: N-Channel 200V 90A (Tc) 300W (Tc) Through Hole ISO...
DataSheet: IXFR140N20P datasheetIXFR140N20P Datasheet/PDF
Quantity: 1000
1 +: $ 8.61000
10 +: $ 8.35170
100 +: $ 8.17950
1000 +: $ 8.00730
10000 +: $ 7.74900
Stock 1000Can Ship Immediately
$ 8.61
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Series: PolarHT™ HiPerFET™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFR140N20P is a type of Field Effect Transistor (FET) designed for high frequency switching applications. It is a high power Single N-Channel MOSFET (HexFET) discrete power device, with low on-resistance, rated for a drain current of up to 140A, and capable of withstanding peaks up to 320A. This device is designed for operating voltages up to 200V, and on-state resistance of 0.04 Ohm.

The IXFR140N20P is an integral part of many power switching applications, including high frequency switched-mode power supplies, amplifiers, and other power converters. Its high current and low on-resistance, coupled with a wide range of operating voltages, make it a great choice for many power-switching applications.

The IXFR140N20P works by controlling the flow of a current or voltage through a specific channel, called a gate. When the gate is activated, a voltage is applied and the MOSFET turns on, allowing current to flow. When the gate is deactivated, the voltage is removed and the MOSFET turns off, preventing current from flowing.

When the IXFR140N20P is used in an application, it is important to understand its working principle. When the gate is opened, the voltage and current on the drain increases, allowing current to flow. When the gate is closed, the voltage and current on the drain decreases, preventing current from flowing.

The IXFR140N20P is also relatively easy to use and maintain. Its on-state resistance, high frequency switching and wide operating voltage range make it a great choice for a variety of applications. It is also suitable for use in automotive, industrial and consumer electronics applications, making it a versatile choice for many engineering requirements.

Overall, the IXFR140N20P is a great choice for high-frequency switching applications. Its low on-resistance, high current and wide operating voltage range make it an excellent option for many power-switching applications. With its easy setup and maintenance, this device is an ideal choice for most power-switching applications, from automotive to consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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