IXFR36N50P

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IXFR36N50P is an advanced trench Field Effect Transistor (FET). It delivers the highest efficiency and power density while reducing the energy costs associated with powering applications. This possibility is offered by IXFR36N50P\'s high-performance, power-optimized, and low-temperature-sensitive trench MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). With its novel design concept, this FET can achieve a wide range of current level at extremely low operating temperatures. This makes it suitable for a variety of applications.

The IXFR36N50P is a N-Channel FET equipped with an active-area shoulder reverse guard to control excessive body diode conduction. This technology improves transient switch performance and reduces switching losses. The device also features a built-in temperature compensation circuit to maintain a predefined battery temperature for efficient power management. IXFR36N50P can be operated in temperature ranges extending from -40oC to +85oC. Furthermore, this advanced FET benefits from a combination of low on-resistance and zero-buffer Qg waveforms, which provide optimal system performance and energy savings.

The IXFR36N50P can be applied in various fields due to its superior performance. It is suitable for use in inverters, controllers, switching circuits and motor controlling systems. This FET can also be used in disk drives, battery chargers, and various aerospace electronic systems. Moreover, the IXFR36N50P is widely used in computer systems, solid-state lighting, and professional audio-alarm systems. It is a suitable option for applications that need high switching speed and high efficiency.

The working principle of IXFR36N50P is based on the concept of FETs, which includes the flow of electric current through a channel that is established by a voltage across two gates. This establishes a controlled electrical link between two conducting elements. When the voltage between the two gates is positive, a channel is formed in the silicon substrate, allowing electrons to flow from one side of the substrate to the other. It is the movement of these electrons which results in the flow of current through the FET.

The IXFR36N50P is a specialized type of FET device with a high on-resistance and an optimized gate structure. This improves the device\'s switching ability and enables it to operate faster than regular FETs. The IXFR36N50P also has a reverse guard ring which protects against excessive body diode conduction. This helps maintain a stable power distribution and ensures energy savings.

The IXFR36N50P offers low on-resistance and high efficiency in power delivery. Its lower input capacitance also helps to reduce system costs. In addition, its active area shoulder reverse guard minimizes switching losses, improving the efficiency and reliability of power delivery in heavy load applications. With its high-powered performance, enhanced efficiency, and cost-effective design, the IXFR36N50P is an excellent choice for a wide range of applications.

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