IXFR30N60P

Vgs(th) (Max) @ Id:	5V @ 4mA
Package / Case:	ISOPLUS247™
Supplier Device Package:	ISOPLUS247™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	166W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3820pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	85nC @ 10V
Series:	HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:	250 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFR30N60P Application Field and Working Principle

The IXFR30N60P is a type of Insulated Gate Bipolar Transistor (IGBT). It is a voltage-controlled and insulated gate-type transistor which combines the advantages of both bipolar transistors and field-effect transistors. The IXFR30N60P is mainly used in motor control, power conversion, and other applications.The IXFR30N60P has a maximum drain source voltage of 600 V and a maximum drain current of 30 A. It has an on-state resistance of 8.4 mΩ and is designed for use in medium to high voltage applications with a fast switching speed. The IXFR30N60P has a breakdown voltage of 600 V, a forward voltage drop of 2 V, a maximum operating temperature of 150 °C and a maximum gate source voltage of 12 V.The IXFR30N60P uses a number of gate control mechanisms to operate. It has an internal Gate Bias Voltage Generator (GBVG) which can be used to adjust the gate bias voltage. This is necessary to ensure the safe turn-on and turn-off of the device. The GBVG also helps to ensure that the IXFR30N60P operates with a high efficiency.The device also has an internal Gate Clamping Circuit (GCC), which is used to ensure proper control of the gate current and to prevent excessive currents during the device’s turn-on and off transients. The GCC circuit is implemented to ensure that the IXFR30N60P is protected against potential damage or malfunction due to the sudden surges of current.Other protection mechanisms implemented in the IXFR30N60P to ensure safety include thermal shutdown and overcurrent protection. The IXFR30N60P can be used in low and high power applications with a high degree of reliability.The IXFR30N60P can be used in many different applications including motor drives, industrial applications, automotive applications, power supplies and solar power converters. Due to its low on-state voltage and high current capabilities, it is widely used in applications where a large amount of power needs to be delivered quickly.The IXFR30N60P also has a very fast switching time as compared to other types of MOSFETs. This allows for a high level of system performance and efficiency when used in power converters and other high-speed applications.In conclusion, the IXFR30N60P is a type of IGBT which combines the advantages of both bipolar transistors and field effect transistors. It is ideal for applications which require high power and fast switching times, such as motor drives, power supplies and solar power converters. The IXFR30N60P has various protection mechanisms to ensure safety and is rated for both low and high power applications.

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