IXFR140N30P

The IXFR140N30P is an N-channel enhancement-mode field effect transistor (FET) which is completely isolated from the other parts of the circuit using the OptiMOS™ isolation process. It has been designed to provide high-frequency switching and subtle analog control. This FET is suitable for use in a wide variety of applications, including power supply, load switching, motor control, and voltage regulation. This article will discuss the application fields and working principle of the IXFR140N30P.

Application Field of IXFR140N30P

The IXFR140N30P has a rated drain-source voltage of 30V, an on resistance of 170mΩ (max), a maximum general withstand voltage of 200V and a maximum current of 18A. The device can provide very low on-resistance and low gate charge, making it ideal for high-frequency operation. This makes it suitable for a variety of high-frequency switching applications. For example, the FET can be used in SMPS circuits, DC-DC converters, offline transformers, light dimming, and LED drivers. Additionally, the FET can be used for switching applications in audio equipment and other consumer electronics. The FET can also be used in automotive and industrial environments.

Working Principle of IXFR140N30P

The IXFR140N30P is an N-channel enhancement-mode FET, which means it has an n-type channel and a p-type drain. The channel is connected to the source electrode, while the drain is connected to the source in such a way that the drain-source voltage is always positive. A positive voltage on the gate electrode causes the channel to become more conductive and current to flow between the source and drain. This is known as the enhancement-mode of operation. On the other hand, when a negative voltage is applied to the gate, the channel becomes less conductive and the drain current reduces. This is known as the depletion-mode of operation.

The IXFR140N30P has a maximum drain-source voltage of 30V, a maximum current of 18A, and a maximum on-resistance of 170mΩ. It also offers very low gate charge and high-frequency operation due to its OptiMOS™ isolation process. This makes it an ideal choice for a wide variety of applications, including power supply, load switching, motor control, and voltage regulation.

Conclusion

The IXFR140N30P is an N-channel enhancement-mode FET which is suitable for high-frequency switching applications. It has a maximum drain-source voltage of 30V, a maximum current of 18A, and a maximum on-resistance of 170mΩ. The device is also capable of very low gate charge and offers high-frequency operation due to its OptiMOS™ isolation process. The IXFR140N30P can be used in a variety of applications, including power supply, load switching, motor control, and voltage regulation.