IXFR90N20

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IXFR90N20 is an enhanced power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching applications in telecom, computer and automotive industries. This FET (Field Effect Transistor) features high rate, high temperature and low on-resistance. It is widely used in a variety of application fields, from power switching to amplifying electrical signals.
The IXFR90N20 is an enhancement-mode transistor. This type of transistor operates by having an electrical current pass between the source and the drain. The voltage applied between the gate and the source controls the current flow, allowing the transistor to act as a switch to control power or as an amplifier which amplifies electrical signals. The electrical current that flows through the transistor is determined by the resistance between the gate and the source. When the gate voltage is increased, the resistance between the gate and the source is decreased and the current flow is increased.
The IXFR90N20 has a gate threshold voltage of 4.0V and a Low Video gate threshold of 2.7V. It also has a maximum drain-source breakdown voltage of 500V. It is also ESD protected to 8kV in the Human Body Model. Maximum junction temperature of 175 C, allowing it to operate in harsh environments. It is able to switch higher currents than other FETs and handle higher temperature./p>
The IXFR90N20 is used in many circuits including switching power supplies, DC-to-DC converters, LED lighting, power amplifiers for audio systems, and many other consumer and industrial applications. Additionally, it is well known for its fast switching times, low on-resistance, and small package size it is often used for portable or space-constrained applications. It also exhibits very low gate leakage currents in order to reduce power dissipation.
In conclusion, the IXFR90N20 is an extremely versatile FET which is well suited for a variety of power switching and amplification applications. Its unique characteristics, such as low on-resistance, fast switching times, and small size make it a great choice for circuits which require high power switching with low power dissipation. Additionally, its ESD protection and wide temperature range make it an ideal choice for many machines and devices which are expected to operate in harsh environments.

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