IXFR15N100Q3 Allicdata Electronics
Allicdata Part #:

IXFR15N100Q3-ND

Manufacturer Part#:

IXFR15N100Q3

Price: $ 12.34
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 10A ISOPLUS247
More Detail: N-Channel 1000V 10A (Tc) 400W (Tc) Through Hole IS...
DataSheet: IXFR15N100Q3 datasheetIXFR15N100Q3 Datasheet/PDF
Quantity: 56
1 +: $ 11.22030
30 +: $ 9.43593
120 +: $ 8.67083
Stock 56Can Ship Immediately
$ 12.34
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR15N100Q3 is a high-performance, low-voltage, normally-off, enhancement-mode MOSFET device. With a drain to source breakdown voltage of 15V, this device is widely used in a variety of applications including motor control, power management, and consumer electronics. As the drain and source currents increase, the device provides a low forward voltage drop with minimal power dissipation allowing for greater system efficiency. In addition, its enhanced channel design provides an extremely low on-resistance rating and excellent switching performance.

The device is a three-terminal MOSFET that is designed to operate in both enhancement-mode and depletion-mode depending on the applied gate voltage. When the MOSFET is in the OFF state, the current passing through the channel is close to zero. When the voltage at the gate is increased beyond a certain threshold point, a channel is formed and a current (ID) will flow depending on the voltage across the source and drain leads.

The IXFR15N100Q3 is commonly used in motor control and power management applications due to its low on-resistance and low-voltage operation capabilities. Its low on-resistance allows the device to handle high currents while minimizing power dissipation. This makes it an ideal choice for applications such as motor drive circuits and power switch circuits which require a high current-handling capacity and minimal power dissipation.

In motor control applications, the IXFR15N100Q3 is used in a variety of ways such as gate drive for MOSFETs, enhancing the PWM signal, and as a controller for current limiting. The device\'s low-voltage operation capability allows it to be used in battery operated applications where a minimum supply voltage is required. In power switch applications, the device is used to turn DC/DC converters, solid state lighting, and power supplies on and off. The device can also be used to reduce voltage drops in an inverter circuit due to its low on-resistance rating. In addition, the device can be used as a low side switch in bidirectional applications such as DC to DC applications.

The IXFR15N100Q3 is a versatile device that has a wide range of applications. Its low-voltage operation capability and low on-resistance rating make it an ideal choice for motor control, power management, and consumer electronics applications. Additionally, the device is designed to operate in both enhancement-mode and depletion-mode providing greater flexibility when selecting the optimum operating mode.

The specific data is subject to PDF, and the above content is for reference

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