IXFR180N085

Vgs(th) (Max) @ Id:	4V @ 8mA
Package / Case:	ISOPLUS247™
Supplier Device Package:	ISOPLUS247™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	400W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	320nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	7 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	85V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFR180N085 Application Field and Working Principle

IXFR180N085 is a series of insulated gate field-effect transistors, or MOSFETs, with a wide range of applications. MOSFETs are devices that can be used in both digital and analog applications, allowing for switching and amplification. IXFR180N085 is a single-channel MOSFET, meaning that it has only one gate. This makes it very versatile in that it can be used in both single and multiple channels.The IXFR180N085 is designed for both high-side and low-side switching. This means that it can be used to switch higher voltage signals, such as those found in automotive, industrial, and consumer electronics. In addition, this type of MOSFET can be used for amplification in RF and audio amplifiers.The main advantage of this type of MOSFET is its superior performance. It can handle higher power than other types of MOSFETs and can also operate at higher frequencies. This makes it especially useful for high power or high frequency applications such as RF power amplifiers and switching power supplies.In terms of its working principle, the IXFR180N085 acts like a switch. It is composed of a source, a drain, and a gate. When the gate is opened, current is able to flow through the source and drain, allowing for electrical signals to pass through. The size of the current that is allowed to pass depends on the voltage applied to the gate. By changing the size of the applied voltage, one can control the amount of current that passes through the MOSFET. This is the basic principle by which MOSFETs are used in digital and analog circuits.The IXFR180N085 is very efficient in terms of its power consumption. Unlike some other types of MOSFETs, the IXFR180N085 can operate at low currents and still remain in the linear region. This means that it requires less power to maintain the same level of output. This makes it an ideal choice in applications where power consumption is critical, such as portable electronics and communications systems.The IXFR180N085 is also very easy to use. It is a plug-and-play device, which means that it can be easily integrated into a variety of applications without the need for complex circuitry or programming. This type of MOSFET also has a wide operating temperature range, making it suitable for use in a variety of environments.In conclusion, the IXFR180N085 is an ideal choice for a wide range of applications, ranging from high-side and low-side switching to amplification in RF and audio amplifiers. This type of MOSFET is notable for its superior performance, low power consumption, and ease of use. It is therefore a popular choice for many types of devices and systems.

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