Allicdata Part #: | IXFR26N50-ND |
Manufacturer Part#: |
IXFR26N50 |
Price: | $ 7.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 26A ISOPLUS247 |
More Detail: | N-Channel 500V 26A (Tc) 250W (Tc) Through Hole ISO... |
DataSheet: | IXFR26N50 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.75782 |
Series: | HiPerFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOPLUS247™ |
Package / Case: | ISOPLUS247™ |
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The IXFR26N50 is a depletion-type metal oxide semiconductor field-effect transistor (MOSFET). It is designed to operate with a drain source voltage of 26 V, a drain source current of 5 A, and an on-state resistance of 0.09 Ohms. It is typically used in applications such as motor control, high-power switching, and power conversion.
A MOSFET works by using the electric field from a gate terminal to control current flow between a source terminal and a drain terminal. The gate voltage creates a depletion region in the semiconductor channel between the source and the drain. An applied gate bias creates a field across the channel, which increases the width of the depletion region. This effect modifies the gain and overdrive voltage of the device. MOSFETs can be operated in either depletion or enhancement mode, depending on the bias applied to the gate terminal. When operated in the desired mode, the MOSFET behaves as an ideal switch, allowing current to flow freely in the ON-state, and preventing current flow in the OFF-state.
When used in its primary application, the IXFR26N50 works in depletion mode. This means that the device will be turned on when the gate voltage is near or slightly below the source voltage. This can be accomplished by applying a low gate voltage to the gate terminal, which will cause the depletion region to form, allowing for current to flow between the source and the drain terminals. When the gate voltage is above the threshold of the device, the depletion region is no longer present and the device is in the OFF state, preventing current from flowing between the source and the drain.
Other applications for the IXFR26N50 can include DC motor control and power conversion. In motor control, the low on-state resistance allows for high-power switching, providing a high current and low power dissipation capability. In power conversion, the device can be used to reduce energy losses in the power cycle since it provides a low conduction path in the ON-state and blocks current in the OFF-state. This allows the device to regulate the voltage level in the circuit, providing a stable current flow and reducing the losses encountered while converting the power.
The IXFR26N50 is a powerful and versatile device, capable of handling large currents and high voltage applications. Its ability to be operated in either depletion or enhancement mode also allows for a broad range of applications. It is an ideal choice for applications that require a high-power switching solution with a low on-state resistance or an efficient power conversion solution.
The specific data is subject to PDF, and the above content is for reference
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IXFR40N50Q2 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 29A ISOP... |
IXFR12N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 10A ISO... |
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IXFR80N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 71A ISOP... |
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IXFR26N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 24A ISOP... |
IXFR26N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 23A ISOP... |
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