IXFR44N50Q3

Vgs(th) (Max) @ Id:	6.5V @ 4mA
Package / Case:	TO-247-3
Supplier Device Package:	ISOPLUS247™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4800pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	93nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	154 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IXFR44N50Q3 is a widely used insulated gate bipolar transistor (IGBT) module that is available from several manufacturers and suppliers. The device is a four-terminal, insulated bipolar transistor (IGBT) module with a maximum load current of 44A and a maximum on-state drain-source voltage of 950V. This device is ideal for use in high current applications such as power supplies, motor drives, and other power related applications. It has a low power dissipation and can handle a large variety of load types.

Types of IXFR44N50Q3 Module

There are two types of IXFR44N50Q3 modules, a field effect transistor (FET) and a metal-oxide semiconductor field-effect transistor (MOSFET). Both of these devices are insulated gate bipolar transistors (IGBT) with different characteristics and capabilities. FET modules are relatively inexpensive and consume a small amount of energy. They are compatible with high-power loads and can operate at low voltages. They are also highly reliable and have a long life expectancy. MOSFET modules are more expensive and consume more energy than FET modules, but they have higher power output capabilities. The advantage of MOSFETs is that they can operate at a higher frequency and are better suited for certain applications.

IXFR44N50Q3 Application Field and Working Principle

The IXFR44N50Q3 can be used in a variety of applications and industries where high current loads are required. These applications include, but are not limited to, power supplies, motor drives, and other power related applications. The IXFR44N50Q3 module is particularly well-suited for high current applications because it has a low power dissipation, can handle a variety of loads, and operates reliably and at low voltage. The IXFR44N50Q3 uses an insulated gate bipolar transistor (IGBT) in tandem with a MOSFET or FET module to regulate and control current in the load device. The IGBT acts as the primary power switch and the MOSFET or FET module acts as the secondary switch. When the IGBT is in the "on" state, it acts as a short circuit, allowing current to flow through it to the load device. Then, when the IGBT is in the "off" state, the MOSFET or FET module will then act as a high impedance, preventing current from flowing through the load. This allows the current to be regulated and controlled, and the device to be used in demanding applications.

Conclusion

The IXFR44N50Q3 IGBT module is a versatile, efficient, and reliable device that is perfect for use in high current applications such as power supplies, motor drives, and other power related applications. The device is available in both FET and MOSFET configurations, allowing it to handle a wide variety of loads, and operate reliably and at low voltage. Combining an IGBT with a MOSFET or FET allows for efficient current regulation and control making it an ideal device for many demanding applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description