IXFR70N15 Allicdata Electronics
Allicdata Part #:

IXFR70N15-ND

Manufacturer Part#:

IXFR70N15

Price: $ 7.69
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 67A ISOPLUS247
More Detail: N-Channel 150V 67A (Tc) 250W (Tc) Through Hole ISO...
DataSheet: IXFR70N15 datasheetIXFR70N15 Datasheet/PDF
Quantity: 1000
30 +: $ 6.91614
Stock 1000Can Ship Immediately
$ 7.69
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the world of electronics, transistors are essential components as they allow for the switching, amplification, rectification and protection of current. IXFR70N15 is one type of device which falls under the category of transistors known as a Field Effect Transistors (FET).As a FET, IXFR70N15 has the ability to control the electrical current through the use of a gate. This makes it well suited for use in many modern applications in which the currents need to be switched very quickly and efficiently.

The IXFR70N15 FET is an enhancement type MOSFET which has a low RDS(on) of 5.0mΩ (max) @ 10V, high Drain Currents of 70A (max) and a Drain-to-Source breakdown voltage of 175V (max). This makes it ideal for a wide range of applications, including motor control, low duty cycle DC/DC converter control, audio amplifier circuits and high current switching circuits that require low on-resistance and low gate drive voltage.

The actual working principle of the IXFR70N15 MOSFET is based on the capacitance between the gate oxide and a conducting surface (namely the drain and source).The gate oxide is a thin layer which is made up of silicon dioxide and is kept at a voltage (Vgs) higher than the voltage of the source terminal (Vds). This causes the electrons to be drawn to the gate oxide and creates a field effect which induces a conductive channel between the drain and source. This channel allows for current to flow from the drain to the source. The key feature of the MOSFET is that this channel can be shut off and on by manipulating the voltage of the gate which allows for the current to be controlled. This makes IXFR70N15 an excellent option for use in electronic applications which require high current switching and power control.

In conclusion, IXFR70N15 is a type of MOSFET which offers high performance and is well suited for use in applications which require high current switching and power control. The IXFR70N15 has a low RDS(on) and a high drain current and can be easily operated by manipulating the gate voltage. This makes it an ideal choice for those looking to build projects that require efficient switching and management of the electrical current.

The specific data is subject to PDF, and the above content is for reference

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