IXGT32N90B2D1 Discrete Semiconductor Products

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An IXGT32N90B2D1 is a single insulated gate bipolar transistor (IGBT), which belongs to the family of transistors. The IXGT32N90B2D1 is commonly used for power electronic applications due to its high switching speeds and low energy dissipation. In this article, we will explore the application field and working principle of the IXGT32N90B2D1 transistor.

IGBTs are used in many application fields, such as: adjustable speed drives, hybrid electric vehicle (HEV) inverters, motor controls, medical equipment, welding machines, power converters, and solar inverters. An IGBT is able to switch loads quickly and efficiently, making it suitable for motor control and frequency conversion applications as well as in other high-frequency signal applications.

The IXGT32N90B2D1 is a 900V IGBT, and it has a tFE trr of 5.0ns, a 2.0nC tail current, and a 1.25nC maximum attainable frequency. The IXGT32N90B2D1 has an extended current rating of 28Amp and a maximum voltage rating of 1700V. The IXGT32N90B2D1 also has a low drain-source saturation voltage, making it ideal for high-speed applications.

Furthermore, the IXGT32N90B2D1 has a low reverse current, which is advantageous for the design of a high-performance power supply. Additionally, the IXGT32N90B2D1 has a low turn-on voltage, which ensures consistent operation during high-speed switching applications. Moreover, the IXGT32N90B2D1 has a low thermal resistance and low noise, allowing it to be applied in noise sensitive environments. Finally, the IXGT32N90B2D1 can be employed in applications where a low-emission voltage is required.

In terms of its working principle, an IGBT consists of two junction regions in its active region — the n-type and p-type — along with a gate controlling the flow of current from the source to the drain. When the gate is turned ‘on’, the device turns ‘on’ and conducts current; whilst when the gate is turned ‘off’, the device turns ‘off’, thus preventing the current flow. This ‘on’ and ‘off’ state is logically taken as a ‘high’ and ‘low’ state in digital systems. Furthermore, the IXGT32N90B2D1 has an isolated gate structure, meaning it is insulated from the active region.

In conclusion, the IXGT32N90B2D1 is an insulated gate bipolar transistor, commonly used for power electronic applications. It has high switching speeds, low energy dissipation, an extended current rating of 28Amp and a maximum voltage rating of 1700V. Additionally, the IXGT32N90B2D1 has a low drain-source saturation voltage, low reverse current, low turn-On voltage, low thermal resistance and low noise. Its working principle consists of a gate controlling the flow of current from the source to the drain in the ‘on’ and ‘off’ state.

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