Power - Max:	150W
Base Part Number:	IXG*20N120
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	800V, 20A, 47 Ohm, 15V
Td (on/off) @ 25°C:	28ns/400ns
Gate Charge:	63nC
Input Type:	Standard
Switching Energy:	6.5mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 20A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXGT20N120 Application Field and Working Principle

Introduction

The IXGT20N120 is a three-terminal, high voltage N-channel insulated gate Enhancement Mode Field Effect Transistor (IGFET), which belong to the IGBT (Insulated Gate Bipolar Transistor) family. It features very high blocking voltage of 1200V, IGBT with fast switching speed, ease of paralleling and optimized cellular design with built-in tightly matched and monolithic gate driver. This paper will analyse its application field, working principle and its relative parameters.

Application Field

Being an IGFET, the IXGT20N120’s application field would be varied. Being a high voltage transistor, it can be used for industrial processes and equipments where high power precision is needed. Due to its high current capacity, it is also suitable for use in motor control and high voltage circuits. Additionally, its low thermal resistance also make it ideal for motor control applications. Other important application fields include power factor correction circuits, home appliances, and general purpose switching in various types of power system. The IXGT20N120 is also well-suited for high speed switching, such as High-speed logic gate of digital control system and inverters of high-efficiency illumination systems. Furthermore, its high-voltage range and high-speed response make it suitable for uninterruptable power supplies, snubbers in wind turbines, and also for medical equipment. With its ultra-low switching losses, low stray inductance, and high dielectric strength, the IXGT20N120 is widely used in most power electronic switching applications.

Working Principle

IGBTs are semi-conductor devices which have both p-type and n-type regions. They have a controlled gate drive enabling the power flow direction to be switched by voltage control. When positive voltage applied to the gate, the channel forms between emitter and collector regions, making a normal conduction state. In the case of the IXGT20N120, they consist of an N-type channel in an N-type Semiconductor material, meaning that current flows mainly between the emitter and collector regions when in the forward conduction state. This is known as the Enhancement Mode, as the channel requires a static Voltage applied to the gate to create a conduction path. The IXGT20N120 has a blocking voltage of 1200V.

Parameters

The IXGT20N120 has several electrical parameters that differentiate it from other IGBTs. The most important ones are:

• Gate-Emitter Voltage: 20V
• Collector-Emitter Saturation Voltage: 2.4V
• Operating Temperature: -55℃ ~ +175℃
• Blocking Voltage : 1200V
• Gate Thuunders: +12V/+8V/+5V/-5V
• On-state Gate Voltage: +20V/+13V/+6V/-6V
• Ideal turn-on voltage:10-18V
• Ideal turn-off voltage:-2.5 to -3.3V
• Output power rating:7BAO

These parameters are critical for the IXGT20N120\'s efficacy and operation depends on how the device is designed.

Conclusion

The IXGT20N120 is a transistor belonging to the IGBT family, which is specifically designed for high voltage switching and fast switching applications. It has high blocking voltage of 1200V, low switching losses, and low stray inductance, making it suitable for use in industrial and power systems. Its parameter range also makes it ideal for industrial equipments, motor control, and appliance control. Overall, the IXGT20N120 is a robust and useful transistor for many applications requiring fast, high voltage switching and control.

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