IXTA05N100HV Allicdata Electronics
Allicdata Part #:

IXTA05N100HV-ND

Manufacturer Part#:

IXTA05N100HV

Price: $ 2.68
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1KV 750MA TO263
More Detail: N-Channel 1000V 750mA (Tc) 40W (Tc) Surface Mount ...
DataSheet: IXTA05N100HV datasheetIXTA05N100HV Datasheet/PDF
Quantity: 47
1 +: $ 2.43180
50 +: $ 1.95615
100 +: $ 1.78227
500 +: $ 1.44320
1000 +: $ 1.21716
Stock 47Can Ship Immediately
$ 2.68
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA05N100HV is an Electric Field Effect Transistor (FET) designed for industries requiring high performance yet simple solutions to complex digital switching. It has a low V CEsat channel, making it ideal for high accuracy, digital applications. It works by converting an electronic signal into a powerful, current-controlled electronic switch. The gate electrode is designed to sense the voltage applied to the control gate, allowing the conduction state of the channel to be precisely controlled using relatively low control voltages. This feature allows for the selection of one electronic signal from a number of potential inputs, making it ideal for high accuracy switch control applications.

The IXTA05N100HV is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It combines a metal gate electrode and an insulated gate, forming a field effect transistor. It requires no gate current, but only a control voltage to operate. It is a three-terminal device, with drain, source, and gate terminals. The control voltage applied to the gate controls the current flow between the drain and source. The source is connected to the substrate, while the gate connection is made via a metal conductor.

The IXTA05N100HV is specially designed for high frequency and low power applications. It features a very low threshold voltage and a low RDS(on) resistance. It also has a very low gate capacitance and a fast switching time. The device is designed for use in digital switching solutions, where a low power and high speed operation is required. The device is also suitable for applications such as motor control, high-speed communication, and data acquisition.

The IXTA05N100HV can also be used in analog circuits, as a precision digital potentiometer. The device has a very low input and output impedance, which allows it to be used as a low impedance network. Moreover, the low input and output impedance results in low power consumption, and excellent analog performance. The device is suited for a wide range of applications such as level shifting, filtering, and gain control.

The IXTA05N100HV is a very versatile and reliable device, suitable for many applications. Its low on-resistance allows it to be used in high precision digital switching solutions. It also has a very low gate capacitance which is ideal for high-speed applications. Its low input and output impedances make it suitable for low power analog circuits. This device can help designers to find the perfect solution for their digital and analog system requirements.

The specific data is subject to PDF, and the above content is for reference

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