Allicdata Part #: | IXTA4N65X2-ND |
Manufacturer Part#: |
IXTA4N65X2 |
Price: | $ 1.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 4A X2 TO-263 |
More Detail: | N-Channel 650V 4A (Tc) 80W (Tc) Surface Mount TO-2... |
DataSheet: | IXTA4N65X2 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.19549 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA4N65X2 transistors are designed for use in electronic applications as field effect transistors. They are an example of metal-oxide-semiconductor field effect transistors (MOSFETs) and are single transistors with a single gate. The IXTA4N65X2 is designed for applications that require high performance with low on-resistance and low gate charge, including high-speed power switching, motor control, low voltage system power supplies, and low voltage LED lighting.
In the IXTA4N65X2 application field, it is well suited for MOSFETs which can switch signals with extremely low power consumption and low distortion. It is also useful for biasing circuits, analog and digital amplifiers, rectification circuits, and other switching applications. Because of its low on-resistance, this transistor can be used as an efficient switch in circuits requiring high switching speeds and low power consumption.
The working principle of this IXTA4N65X2 transistor is based on the transfer of electric charge by a diffusion process. The transistor has a source, drain and gate which are the three terminals through which charge can be transferred. The source provides electrons which are transferred to the drain under the influence of the gate voltage. Variation of this voltage then allows the transistor to switch between its two states on and off.
The IXTA4N65X2 is also known for its low gate charge, which offers high frequency operation in digital circuits. This is because its gate charge is so low that it can turn on quickly and then immediately turn off, resulting in very fast switching times. This makes it ideal for applications that require fast switching and high efficiency.
The IXTA4N65X2 also offers excellent thermal performance, with a maximum drain-source voltage (VDS) of 800 volts and its maximum drain current (ID) rapidly increasing from 4 Amps to 20 Amps at higher temperatures.
Overall, IXTA4N65X2 is a well-rounded transistor that offers a wide range of features and benefits for high-speed switching applications. Its low power consumption and low gate charge make it ideal for use in power management circuits and other low-voltage applications. It is also durable, reliable and capable of operating at high temperatures.
In conclusion, the IXTA4N65X2 is a great choice for a wide variety of high-speed switching and low power consumption applications. With a low gate charge, high voltage capability, low on-resistance and excellent thermal performance, it is an ideal choice for digital and high frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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