Allicdata Part #: | IXTA2N80P-ND |
Manufacturer Part#: |
IXTA2N80P |
Price: | $ 0.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 2A TO-263 |
More Detail: | N-Channel 800V 2A (Tc) 70W (Tc) Surface Mount TO-2... |
DataSheet: | IXTA2N80P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.79115 |
Vgs(th) (Max) @ Id: | 5.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10.6nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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IXTA2N80P is a single P-channel enhancement mode power MOSFET of incredible potential. This transistor is one of the most popular MOSFETs used in controlling current levels and switching loads with low on-resistance. Its main objective is to offer loads, current amplifiers, and low on-resistance while also providing soft turns-on without any self-loading.
As far as its application field is concerned, IXTA2N80P offers an impressive range of possibilities, making it ideal for motor drive and power management applications. This MOSFET is also widely used in consumer electronics, automotive and audio control applications, high-speed switching circuits, DC-DC converters, battery protection, and portable products. Additionally, IXTA2N80P is particularly suitable for off-line and DC-to-DC converters, as well as for low voltage, high frequency inverters.
In simple terms, IXTA2N80P is a type of transistor which operates by controlling the flow of a voltage or a current. It does so by controlling the gate voltage, which in turn, modulates the threshold voltage – ‘VGS’ for short. This is the voltage at which the MOSFET begins to supply current from the drain to the source. When the VGS is equal to or greater than the specified gate threshold voltage, the transistor is ‘on’. Conversely, when the VGS is lower than the specified gate threshold voltage, the device is ‘off’.
In terms of its working principle, IXTA2N80P more commonly known as an N-type MOSFET, is configured in a range of different ways. In principle, the MOSFET is placed between two terminals, the drain and the source. Its gate terminal is connected to an external voltage, thus regulating the flow of current between the source and drain. The width of the channel between the two terminals is what dictates the current flow.
When the drain terminal is connected to a positive voltage, current can flow from the source terminal. This current flow is modulated by the gate voltage applied to the gate terminal. When the gate voltage is greater than the threshold voltage, the channel opens allowing current to travel from the source to the drain. On the other hand, when the gate voltage is lower than the threshold voltage, the channel is shut off and no electrical current is allowed to flow through the device.
At high frequencies, the MOSFET behaves as an amplifier. This means that it adjusts the input signal gain and inverts its phase. The device also exhibits high linearity and can amplify many different types of signals, including digital and analog ones. Because of this feature, IXTA2N80P is commonly used in all sorts of audio amplification circuits.
To sum it up, IXTA2N80P is an impressive single P-channel enhancement mode MOSFET which is used in a wide range of applications and can be configured in various ways. Not only does it offer loads, current amplifiers, and low on-resistance, but it can also amplify signals at high frequencies. It is, therefore, an essential component for many consumer electronics, automotive, audio control, and high-speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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