Allicdata Part #: | IXTA130N10T-ND |
Manufacturer Part#: |
IXTA130N10T |
Price: | $ 2.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 130A TO-263 |
More Detail: | N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount T... |
DataSheet: | IXTA130N10T Datasheet/PDF |
Quantity: | 653 |
1 +: | $ 2.15460 |
50 +: | $ 1.73880 |
100 +: | $ 1.56492 |
500 +: | $ 1.21716 |
1000 +: | $ 1.00850 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5080pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA130N10T is a high power field-effect transistor (FET) that is manufactured by Infineon Technologies. It is a monolithic device designed specifically for fast switching in high power-handling applications and is an improved version of the IXTA130N10, which was developed earlier by the same company.
The IXTA130N10T is a single-pole, double-throw (SPDT) transistor. It is a type of MOSFET (metal-oxide semiconductor field-effect transistor) that uses an insulated-gate transistor to control the flow of current. The gate of the transistor is connected to a gate voltage, which can be varied to control the current flow in the on and off states. The gate voltage determines how much current will be allowed to flow in the on state, and how much current will be blocked in the off state. The gate voltage is typically controlled by the application circuitry.
The IXTA130N10T has a drain-source breakdown voltage of 130V, and a drain-source on resistance of 10 milliohms. It is rated for up to 10 amps of drain current, and can handle peak voltages of up to 200V. The transistor is designed for use in high current applications such as motor drives, load switching, and DC/DC converters.
The IXTA130N10T can be used in applications where fast switching is required. The combination of its low on-state resistance and high breakdown voltage make it an ideal choice for applications that need to switch large DC loads quickly. The transistor has the ability to dissipate large amounts of power, which makes it well-suited for use in high-power motor drives and other switching applications.
When used in a motor control or switching application, the IXTA130N10T works on the principle of voltage/current transfer. The transistor is connected between two circuits, with one side connected to the gate of the transistor and the other side connected to the drain of the transistor. When a voltage is applied to the gate of the transistor, it creates a channel between the drain and the source of the transistor, allowing current to flow from the drain to the source. As the voltage increases, the transistor will reach its turn-on point, and current will start to flow. This current can then be used to drive a motor or other load.
When the voltage at the gate is decreased, the drain-source path will become blocked, and current cannot flow. This is the off state of the transistor, and can be used for load switching and motor control applications. This on/off cycle can be used to control the speed of a motor, or the current being switched in a DC-DC converter.
The IXTA130N10T is a versatile and reliable MOSFET that can be used in a wide range of applications. Its low on-state resistance and high power handling capabilities make it a popular choice for high-power motor drives, load switching, and DC/DC converters. It is also a good choice for applications that require fast switching.
The specific data is subject to PDF, and the above content is for reference
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