IXTA62N15P Allicdata Electronics
Allicdata Part #:

IXTA62N15P-ND

Manufacturer Part#:

IXTA62N15P

Price: $ 2.25
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 62A TO-263
More Detail: N-Channel 150V 62A (Tc) 350W (Tc) Surface Mount TO...
DataSheet: IXTA62N15P datasheetIXTA62N15P Datasheet/PDF
Quantity: 1000
50 +: $ 2.02142
Stock 1000Can Ship Immediately
$ 2.25
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA62N15P is a wideband ultra-high efficiency power FET that combines the capabilities of a FET and a MOSFET in one device. Developed by IXYS Corporation, the IXTA62N15P features a maximum drain current of 30 Amps and a breakdown voltage of 30 Volts.

The IXTA62N15P is often used in the fields of wind turbines, electric vehicle infrastructure, high voltage solar PV power converters, power supplies, high power DC-DC converters and other high-power applications. This device offers good static and dynamic performance, with power conversion efficiency of up to 96%, and is capable of operating up to 175°C ambient temperature. The device also comes with a high peak current and fast switching speed.

The key ingredients to the IXTA62N15P’s performance are its FET-based structure and a MOSFET. By combining the two, IXYS creates a single device that possesses the performance of both. The FET-based structure of the device allows for higher current capabilities and lower static losses. The MOSFET structure of the IXTA62N15P gives it excellent thermal stability and power conversion efficiency.

The working principle of the IXTA62N15P is based on the same principle of any other power FET or MOSFET, with the added benefit of combining the characteristics of both. Power is applied to the drain of the device, and by adjusting the gate voltage, the drain-source current can be controlled. This current controls the flow of electricity through the device. The IXTA62N15P is designed specifically to handle high-power applications, with the ability to switch fast and hold a high current. Its high power conversion efficiency makes it ideal for wind turbine, EV infrastructure, PV power converter and power supply applications.

The IXTA62N15P is a versatile, high-power device that offers excellent performance for many applications. Combining the characteristics of a FET and a MOSFET, the IXTA62N15P is capable of handling high current at high efficiency. Its low static losses and ability to handle fast switching speeds make it a great choice for many power applications. The IXTA62N15P is a great choice for any application that requires high power with excellent efficiency.

The specific data is subject to PDF, and the above content is for reference

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