IXTA32P20T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTA32P20T is an N-channel silicon carbide power prismatic MOSFET operated at a junction temperature of -55°C to 175°C. The IXTA32P20T is specifically designed for automotive applications and has a low gate charge and low total gate charge (Qg) to maximize system efficiency. This device is configured in a dual trench MOSFET structure with bonded terminations, operating in a logic level drain and force temperature environments.

The IXTA32P20T can be used for a variety of applications, such as switching for lighting, charging, DC-DC conversion, and motor control in automotive and renewable energy applications. It can also be used in non-automotive applications, like power conversion and switched-mode power supplies (SMPS) for PCs, servers, and storage solutions.

The IXTA32P20T is a vertical N-channel MOSFET with p-type gate insulation composed of a SiC trench and doped gate structure. This ensures excellent high voltage blocking capabilities from the gate to the drain. It has low gate charge and low on-state resistance for high efficiency. The short circuit rated drain current of 32A helps reduce losses. In addition, the IXTA32P20T is designed with a temperature-compensating avalanche drain current behavior and improved turnover current characteristic to prevent thermal runaway.

The IXTA32P20T has a drain-source breakdown voltage (BVdss) of 600V, and a drain-source on-state resistance (Rds) of 28 mΩ, making it an ideal choice for energy efficient applications. Its maximum drain current (Id) is 32A and its maximum drain-source voltage (Vds) is 600V. It has an L-shaped source pin terminal configuration and a metal-insulated gate structure. This allows the power MOSFET to achieve a high level of performance and reliability in even the most demanding automotive applications.

In conclusion, the IXTA32P20T is an efficient and reliable device specially designed for automotive and renewable energy applications. It has a low gate charge, low on-state resistance, short circuit rated drain current, and excellent high-voltage blocking capabilities. It is an ideal choice for applications requiring power conversion and switched-mode power supplies.

The specific data is subject to PDF, and the above content is for reference