Allicdata Part #: | IXTA1R6N100D2HV-ND |
Manufacturer Part#: |
IXTA1R6N100D2HV |
Price: | $ 2.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 1000V 1.6A (Tj) 100W (Tc) Surface Mount ... |
DataSheet: | IXTA1R6N100D2HV Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.87463 |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263HV |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 645pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 800mA, 0V |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tj) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IXTA1R6N100D2HV is a type of single metal-oxide-semiconductor field-effect transistor (MOSFET). This specific device is a semiconductor switch with a voltage rating of 100 volts and a current rating of 5.6 Amps. It is commonly used in power management applications, where it enables the switching on or off of higher power levels within an electrical circuit.
A MOSFET is an electrical switch that is available in different sizes, with different power levels, and is widely used for the purpose of controlling currents and voltages in electronic circuit designs. Compared to traditional transistors and field-effect transistors (FETs), MOSFETs provide a higher degree of control over current, voltage and temperature, thereby making them more efficient and reliable. The IXTA1R6N100D2HV is one such example.
The IXTA1R6N100D2HV has a gate-source rating of 20V, which enables it to switch on and off with the application of a small voltage. It also features an internal body diode, which helps to prevent reverse current flow. This internal diode helps to protect other components in the circuit, as it prevents current from being applied to the wrong point in the circuit. Additionally, the IXTA1R6N100D2HV also features a drain-source breakdown voltage of 100V, making it suitable for higher voltage applications.
The primary function of the IXTA1R6N100D2HV is to provide an electrical switch with a high degree of control in terms of current and temperature management. It is commonly used in power management applications, such as in AC and DC motor control, solar energy systems, and high-powered LED lighting systems. It is also used in switching power supplies and isolated power systems. The IXTA1R6N100D2HV is also sometimes used in consumer electronic production systems, such as those used for the manufacture of TVs, radios and other consumer electronics.
The working principle of the IXTA1R6N100D2HV is fairly straightforward. When it is turned on, a small voltage is applied to the gate of the MOSFET, allowing current to flow from its source to its drain. The current flow is controlled by the voltage applied to the gate, and it will switch off when the voltage applied to the gate is removed. This action enables the switching on and off of higher power levels within an electrical circuit.
The IXTA1R6N100D2HV is a highly efficient switch with a high degree of current and voltage control, and is suitable for a wide range of applications. It is also relatively low cost and easy to use. These features make it an ideal choice for a range of applications in power management systems, DC motor control, and AC circuits.
The specific data is subject to PDF, and the above content is for reference
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