IXTA1R4N100P Allicdata Electronics
Allicdata Part #:

IXTA1R4N100P-ND

Manufacturer Part#:

IXTA1R4N100P

Price: $ 1.61
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 1.4A TO-263
More Detail: N-Channel 1000V 1.4A (Tc) 63W (Tc) Surface Mount T...
DataSheet: IXTA1R4N100P datasheetIXTA1R4N100P Datasheet/PDF
Quantity: 1000
50 +: $ 1.44900
Stock 1000Can Ship Immediately
$ 1.61
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
Series: Polar™
Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTA1R4N100P Application Field and Working Principle.

The IXTA1R4N100P is a monolithic enhancement mode Field Effect Transistor (MOSFET). It is a single N-channel MOSFET with a single P-channel control gate. The IXTA1R4N100P has a breakdown voltage of 150 volts and a current rating of 100 amperes. It is designed for use in a wide range of applications, from consumer electronics to industrial switching, as well has high power applications.

The working principle of MOSFETs is applicable to the IXTA1R4N100P. The IXTA1R4N100P is a voltage-controlled device. It has three terminals: the source, the drain, and the gate. The source and drain are connected to the circuit, while the gate is connected to an external voltage source. The gate voltage is used to control the flow of current between the source and the drain, which is dependent on the gate voltage. When a positive voltage is applied to the gate, the drain will conduct current and the MOSFET will be “on”. When the voltage on the gate is zero, the MOSFET will be “off”.

The IXTA1R4N100P is well-suited for use in a wide range of applications. It is commonly used as a power switch in consumer electronics, such as PCs and game consoles, audio amplifiers, and motor controls. It is also used in motor drives and industrial equipment, such as motorized barriers, elevators, and assembly line equipment. In addition, the IXTA1R4N100P can be used in high-power, high-voltage applications such as welding and high-voltage power supplies.

The IXTA1R4N100P is a robust device that is capable of handling large currents and high voltages. It is also highly reliable, with a low on-resistance, high frequency operation, and fast switching speeds. In addition, the IXTA1R4N100P is widely supported by manufacturers and distributors, which makes it easy to obtain.

In conclusion, the IXTA1R4N100P is a robust, reliable, and widely supported single N-channel MOSFET. It is well-suited for a wide range of applications, from consumer electronics to industrial switching and high power applications. Furthermore, its voltage-controlled design makes it an ideal choice for controlling electrical current and voltage.

The specific data is subject to PDF, and the above content is for reference

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