Allicdata Part #: | IXTA1R4N100P-ND |
Manufacturer Part#: |
IXTA1R4N100P |
Price: | $ 1.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 1.4A TO-263 |
More Detail: | N-Channel 1000V 1.4A (Tc) 63W (Tc) Surface Mount T... |
DataSheet: | IXTA1R4N100P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.44900 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.8nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 11 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA1R4N100P Application Field and Working Principle.
The IXTA1R4N100P is a monolithic enhancement mode Field Effect Transistor (MOSFET). It is a single N-channel MOSFET with a single P-channel control gate. The IXTA1R4N100P has a breakdown voltage of 150 volts and a current rating of 100 amperes. It is designed for use in a wide range of applications, from consumer electronics to industrial switching, as well has high power applications.
The working principle of MOSFETs is applicable to the IXTA1R4N100P. The IXTA1R4N100P is a voltage-controlled device. It has three terminals: the source, the drain, and the gate. The source and drain are connected to the circuit, while the gate is connected to an external voltage source. The gate voltage is used to control the flow of current between the source and the drain, which is dependent on the gate voltage. When a positive voltage is applied to the gate, the drain will conduct current and the MOSFET will be “on”. When the voltage on the gate is zero, the MOSFET will be “off”.
The IXTA1R4N100P is well-suited for use in a wide range of applications. It is commonly used as a power switch in consumer electronics, such as PCs and game consoles, audio amplifiers, and motor controls. It is also used in motor drives and industrial equipment, such as motorized barriers, elevators, and assembly line equipment. In addition, the IXTA1R4N100P can be used in high-power, high-voltage applications such as welding and high-voltage power supplies.
The IXTA1R4N100P is a robust device that is capable of handling large currents and high voltages. It is also highly reliable, with a low on-resistance, high frequency operation, and fast switching speeds. In addition, the IXTA1R4N100P is widely supported by manufacturers and distributors, which makes it easy to obtain.
In conclusion, the IXTA1R4N100P is a robust, reliable, and widely supported single N-channel MOSFET. It is well-suited for a wide range of applications, from consumer electronics to industrial switching and high power applications. Furthermore, its voltage-controlled design makes it an ideal choice for controlling electrical current and voltage.
The specific data is subject to PDF, and the above content is for reference
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