Allicdata Part #: | IXTA4N80P-ND |
Manufacturer Part#: |
IXTA4N80P |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 3.6A TO-263 |
More Detail: | N-Channel 800V 3.6A (Tc) 100W (Tc) Surface Mount T... |
DataSheet: | IXTA4N80P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.14106 |
Vgs(th) (Max) @ Id: | 5.5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14.2nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA4N80P is a Power MOSFET manufactured by IXYS. It is part of the MOSFET family, which consists of transistors, field-effect transistors (FETs) and MOSFETs. IXTA4N80P is a single-drain-gate MOSFET, and it is used widely in many applications. It is capable of providing a low on-resistance and high current-carrying capability.
As the name suggests, a MOSFET is a type of field effect transistor which comprises a semiconductor, insulated gate, and source and drain terminals. The insulated gate is the most important part of the MOSFET, as it acts as a switch which controls the flow of current. The current is allowed or blocked by manipulating the electrical field around the gate, which affects the flow of electrons.
IXTA4N80P is a suitable device for applications that require high current switching, such as power supplies, DC-DC converters and motor speed control. It can also be used in power management and audio systems, as well as in industrial and automotive applications. It is also suitable for applications where there is a requirement to switch high voltage and large currents.
In order to understand the application field of IXTA4N80P, it is important to understand its working principle. The working principle of IXTA4N80P is based on negative gate/source voltage, which modifies the threshold of the gate and adjusts the gate-source voltage accordingly. This allows the current to flow through the drain-source channel more easily when a particular voltage is applied across the gate-source. It also allows the use of low gate voltage for low-frequency operation and higher gate voltage for high-frequency operation.
One of the main advantages of using IXTA4N80P for various applications is its ability to efficiently handle large currents. The low gate resistance allows it to easily switch on and off when required. Furthermore, its low on-resistance ensures that it can efficiently handle higher currents than most other transistors.
Finally, IXTA4N80P is capable of providing high reliability levels, which is especially important in safety-critical applications. The device features temperature protection and diode-protective features, which ensures that the device is protected in the event of a power outage or short-circuit.
In conclusion, IXTA4N80P is a single-drain-gate MOSFET that is suitable for switching high currents, as well as providing high reliability for various applications. Its low on-resistance and gate-resistance make it an ideal choice for a wide range of applications, such as power supplies, DC-DC converters, motor speed control and power management.
The specific data is subject to PDF, and the above content is for reference
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