IXTA76N075T Allicdata Electronics
Allicdata Part #:

IXTA76N075T-ND

Manufacturer Part#:

IXTA76N075T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 76A TO-263
More Detail: N-Channel 75V 76A (Tc) 176W (Tc) Surface Mount TO-...
DataSheet: IXTA76N075T datasheetIXTA76N075T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 50µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 176W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTA76N075T is a field-effect transistor (FET) that is commonly used in many electronic and electrical applications. It is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) and is classified as a single-gate operation. It has a small form factor and is suitable for small-signal, power, and high-frequency applications.

A MOSFET is a four-terminal electronic device that consists of a source, gate and drain generally made from semiconductor materials. It works by controlling the amount of current that passes through the channel between the source and drain using the voltage at the gate. In essence, the gate voltage serves as a switch to control the flow of current. When the gate voltage is increased, the current flow increases and when the gate voltage is decreased, the current flow decreases.

The IXTA76N075T is a common-source depletion-mode MOSFET. The ratio of current between the source and drain is inversely proportional to the gate-to-source voltage, such that when the voltage increases, the current decreases, and vice versa. This type of MOSFET is also known as an Enhancement-mode MOSFET as the majority carriers (electrons approaching the source) can only be increased. This makes the IVTA76N075T an ideal choice for linear amplification, switching and voltage-regulation applications.

The IXTA76N075T is commonly used in many applications due to its excellent performance. It is typically used in switching, linear amplifiers, power management, motor control, and voltage regulation applications. It is also useful for high-frequency applications such as radio frequency (RF) power amplifiers and microwave transmitters, as it has an advanced gate design which allows for a wide range of input capacitance.

The IXTA76N075T has its share of advantages, including excellent electrical characteristics, such as low threshold voltage, very low input capacitance, wide voltage range, and high switching speed. It is also relatively inexpensive and it is available in a small surface mount package which is ideal for many applications.

Overall, the IXTA76N075T is a useful and versatile FET that is suitable for many electric and electronic applications. It is a reliable and cost-effective solution for switching, power management and motor control applications. It is also suitable for high-frequency and linear applications due to its advanced gate design, low input capacitance, and wide voltage range.

The specific data is subject to PDF, and the above content is for reference

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