IXTA36N30P

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IXTA36N30P is a low on-resistance, high speed and low capacitance N-Channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), mainly used in power switch and load switching applications, with a wide range of operating voltages and a peak drain current at 36A.

MOSFETs, short for Metal Oxide Semiconductor Field Effect Transistor, are three-terminal, unipolar, voltage-controlled electronic devices constructed from semiconductor material. When voltage is applied to the gate, a small current is formed between the source and drain terminals. This current is the basis of their operation, and the ability to switch on or off, or increase or decrease, the current between the source and the gate based on the gate voltage makes MOSFETs suitable for use in power switching, motor control, actuating relay, high speed digital circuits and many other applications.

IXTA36N30P has a very small load capacitance compared to other similar devices and is rated for up to 30V drain-source voltage (V DS ). It also has a low amount of gate charging current and a very high on-state drain current rating of 36A. This device is mainly targeting in power semiconductor applications such as high speed switching and load switching, where minimal inductance and low switching losses are desired.

The IXTA36N30P works on the principle of an electrostatic field effect. When the voltage applied to the gate is increased, the internal electric field is increased, causing electrons in the conducting channel to become positively charged. This increases the number of electrons available for current flow. When the voltage applied to the gate is decreased, the electric field decreases, resulting in fewer electrons, thus decreasing the amount of current flowing through the device.

The IXTA36N30P is also relatively good in terms of thermal performance, due to its low thermal resistance. This feature allows the device to be used in applications such as power board design, where low thermal stress may be needed. Due to its low on resistance and high peak drain current, it is an ideal choice for use in applications such as lighting fixtures, HDD (Hard Disk Drive) backplanes, servers, servers’ racks, power supplies, inverters, and Uninterruptible Power Systems (UPS).

Overall, IXTA36N30P is a low on-resistance, high speed, and low capacitance N-Channel MOSFET device suitable for power or load switching applications. Its low thermal resistance and low gate charging current allow it to be used in high current and voltage applications, resulting in minimum inductance and switching losses. It offers good thermal performance and reliability for a wide range of applications and is an ideal choice for use in lighting fixtures, HDD backplanes, servers’ racks, power supplies, inverters, and UPS.

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