IXTA3N100D2HV

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTA3N100D2HV is a heat-resistant insulated gate bipolar transistor (IGBT) module developed and manufactured by IXYS Integrated Circuits Division. IGBTs are commonly used in power electronics and switching applications; a prime example is the IXTA3N100D2HV module, which has applications in DC to DC converters, line switching, motor drives, and more. In this article, we will discuss the IXTA3N100D2HV module and its application field, as well as its working principle.

A three-phase IGBT module is a combination of three IGBT switches, each of which is responsible for handling one phase of the application\'s power requirements. The IXTA3N100D2HV module is equipped with three IXTH3N100D2HV IGBT switches, each of which has a robust design to provide operation in harsh environments and temperatures. This module is capable of blocking voltages (Vce) up to 1200 V, a collector current (Ic) of 100 A and an internal gate resistance (Rg) of 0.1 Ω. The IXTA3N100D2HV is also equipped with several built-in protection features, including over-current protection, over-temperature protection, and a 1.8 KV of dielectric isolation..

The IXTA3N100D2HV is suitable for applications such as DC-to-DC converters, motor drives, line switching, motor control, renewable energy, industrial and automotive applications. The power efficiency and reliability of IGBTs makes them a good choice for high power, low frequency applications and in regenerative drives.

The working principle of the IXTA3N100D2HV module is based on the IGBT switching technology. These modules consist of two co-mods, a high-side N-channel IGBT (H-IGBT) and a low-side N-channel IGBT (L-IGBT), linked together. In addition, there is an insulated gate bipolar transistor (IGBT) driver IC, which is used to control the gate signals of the IGBTs. When a voltage is applied to the IGBT gate, the gate-source resistance decreases, allowing current to pass through the IGBT. Therefore, the IGBT can be used to switch on and off the current flow in the circuit. In terms of power losses, IGBTs are more efficient than traditional MOSFETs, due to the absence of drain-source loss associated with MOSFETs.

In conclusion, the IXTA3N100D2HV module is a heat-resistant IGBT module with high power efficiency and robust design. It is suitable for applications like DC-to-DC converters, motor drives, line switching, motor control, renewable energy, industrial and automotive applications. This module is equipped with over-current and over-temperature protection, as well as a 1.8KV of dielectric isolation. The working principle of the IXTA3N100D2HV module is based on IGBTs, which use a combination of two N-channel IGBTs and an IGBT driver. This combination enables fast and efficient switching of power.

The specific data is subject to PDF, and the above content is for reference