IXTA24N65X2

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The IXTA24N65X2 is a high-performance N-channel MOSFET designed to provide excellent switching performance and reliability in consumer and industrial applications. It features excellent on-state resistance (RDS(on)) and low gate charge Qg, making it perfect for high- frequency switching applications such as motor drives, LED lighting, and high-speed logic circuits. The IXTA24N65X2 is manufactured using advanced trench-gate technology to give it increased voltage and higher current ratings, while maintaining an optimized RDS(on) as low as 2.2 mΩ at 10 Vds.

The IXTA24N65X2 is specifically designed for high voltage and high power applications, specifically those which utilize a single-ended N-channel MOSFET. It offers up to 24 volts Drain-to-source withstand voltage (Vds) and 630 mΩ RDS(on) at 14 volts. It has a Total Gate Charge (Qgs) of 4.5 nC, a Gate-to-Source Charge (Qgs) of 2.5 nC, and a Gate-to-Drain Charge (Qgd) of 2 nC. It also offers a Drain-to-Source Breakdown Voltage (BV) of 24 volts and an industry-leading Gate Threshold Voltage (Vgt) of 1.85 V.

The IXTA24N65X2 offers a variety of application fields such as motor control and power stage design, motor drives and actuators, high-powered logic switching, DC-DC power conversion, high-end appliances, and isolated gate drives. Its high-frequency switching performance is great for high-efficiency switching applications due to its rugged construction, long-term stability, and low on-resistance.

The IXTA24N65X2 also offers high-efficiency, high-reliability, and greater temperature stability for efficiency, which provides a stable, reliable, and robust solution. Its advanced trench-gate technology yields a low gate charge and a low forward source-drain diode voltage drop. In addition, it is optimized for very low gate charge and low gate-drain capacitance.

The working principle of the IXTA24N65X2 is based on the MOSFET device structure. It has a silicon substrate and an epitaxial layer of N-type material. The drain-source region consists of four N+ pockets. A gate oxide layer separates the N+ pockets from the gate. The gate is connected to the substrate through a metal oxide semiconductor (MOS) structure. The gate has a higher than usual threshold voltage. The user can control the amount of current by controlling the amount of voltage across the gate and the source. The gate oxide layer blocks the vertical current, thus the drain current will be controlled by the gate voltage.

In summary, the IXTA24N65X2 provides excellent switching performance and reliability in consumer and industrial applications. It has a Total Gate Charge (Qgs) of 4.5 nC, a Gate-to-Source Charge (Qgs) of 2.5 nC, a Gate-to-Drain Charge (Qgd) of 2 nC, a Drain-to-Source Breakdown Voltage (BV) of 24 volts, and an industry-leading Gate Threshold Voltage (Vgt) of 1.85 V. In addition, it has a low on-resistance, a high voltage and high power rating, and a low forward source-drain diode voltage drop. The IXTA24N65X2 is great for switching applications such as motor drives, LED lighting, and high- speed logic circuits, due to its high-frequency switching performance and reliability.

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