Allicdata Part #: | IXTA260N055T2-7-ND |
Manufacturer Part#: |
IXTA260N055T2-7 |
Price: | $ 3.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 260A TO-263 |
More Detail: | N-Channel 55V 260A (Tc) 480W (Tc) Surface Mount TO... |
DataSheet: | IXTA260N055T2-7 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.85277 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | TO-263-7 (IXTA..7) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 260A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA260N055T2-7 is a semiconductor P-channel silicon MOSFET (metal oxide semiconductor field-effect transistor) that is used in a wide range of applications. It is a 60V, 5.5A, and 0.032 ohm device. It has a low total gate charge and superior gate charge efficiency. This device is ideal for switching, amplifier, and driver circuits.
Applications
IXTA260N055T2-7 can be used for power switching, battery switching, and audio/sound amplifier and driver circuits, providing low on-resistance, superior temperature stability, and low gate charge for improved efficiency. Other applications include motor control, dc-dc converters, load switching, and load regulation.
IXTA260N055T2-7 is suitable for various power supply schemes such as external FETs, multiple output power supplies, and multitrail power quality enhancement circuits. It is also a suitable choice for switch mode power supplies, dc boost switching, and AC or DC motor control.
Working Principle
A MOSFET is a type of transistor which uses an insulated gate to control the flow of current between two terminals. The device is operated by modulating the voltage at the gate, which can be used to either turn the device on or off. When operated in an enhancement mode, the device is “on” when a positive voltage is applied to the gate and “off” when a negative voltage is applied. For IXTA260N055T2-7, when the gate voltage is applied, the MOSFET is “on” and the current can flow through the device. As the voltage on the gate is further increased, the drain-source current is also further increased linearly.
IXTA260N055T2-7 is normally operated in a saturation region, where the voltage drop is negative between the source and the drain and is independent of the channel current. This characteristic enables the MOSFET to operate at high efficiency even when operating at high frequencies.
When operating IXTA260N055T2-7, the amount of gate charge should be considered. The amount of gate charge affects the switching time of the device and the overall efficiency of the system. The gate charge of the IXTA260N055T2-7 is low, so the switching time is very fast, resulting in high efficiency.
In applications that require switching low levels of current, such as for power conversion applications, IXTA260N055T2-7 is a good choice. This is because of its low on-resistance, fast switching time and low gate charge. It also features low capacitance and low input capacitance, making it suitable for high-speed switching applications.
IXTA260N055T2-7 is ideal for applications that require low RDS(ON), low gate charge, and fast switching time. It has a relatively low total gate charge and superior gate charge efficiency, making it suitable for applications such as audio/sound amplifiers and drivers, switch mode power supplies, multiple output power supplies, and power switching.
The specific data is subject to PDF, and the above content is for reference
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