
Allicdata Part #: | IXTA14N60P-ND |
Manufacturer Part#: |
IXTA14N60P |
Price: | $ 2.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 14A D2-PAK |
More Detail: | N-Channel 600V 14A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.16000 |
10 +: | $ 2.09520 |
100 +: | $ 2.05200 |
1000 +: | $ 2.00880 |
10000 +: | $ 1.94400 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA14N60P is a type of field effect transistor (FET). The FET is a type of transistor that uses electric fields to shape and control the flow of electricity. IXTA14N60P is a trench-gate metal-oxide-semiconductor FET (MOSFET). It is a type of n-type MOSFET that has two transistors connected in series, a source and a drain, and an insulated gate. The gate is electrically isolated from the source and drain. When a voltage is applied to the gate, it affects the flow of electricity from the source and drain.
.IXTA14N60P transistors are used in a variety of applications, such as power electronics, audio amplifiers, switching regulators and motor control.IXTA14N60P transistors can also be used in voltage and current regulation, as well as signal transmission and processing. They are also commonly used in power management applications.
The working principle of IXTA14N60P transistors is based on capacitance, current and voltage control. At ambient temperature and with a gate voltage close to zero, no current will flow from the source to the drain. When the gate voltage is increased above the threshold voltage of the device, current begins to flow from the source to the drain. This is known as the "on" state, and the current is controlled by the gate voltage. The higher the gate voltage, the more current will flow.
The IXTA14N60P transistor also has an "off" state. Once the gate voltage is reduced below the threshold voltage, the device will enter this state and no current will flow. The threshold voltage is the point at which the current flow changes from the "on" to "off" state, and is determined by the material and the manufacturing process used in the device. This allows the device to be used as an electronic switch.
IXTA14N60P transistors are highly reliable and are capable of operating under extreme temperatures and vibration conditions. They are also highly efficient, with low power consumption and low loss. This makes them a great choice for energy-efficient applications like LED drivers, switching regulators and power converters.
IXTA14N60P transistors are used in a range of applications, from commercial and industrial to automotive and avionics. They are used in everything from power management systems to signal processing to motor controls. With their high reliability, low power consumption and small size, IXTA14N60P transistors are becoming increasingly popular for a variety of applications.
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