Allicdata Part #: | IXTA160N10T-ND |
Manufacturer Part#: |
IXTA160N10T |
Price: | $ 2.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 160A TO-263 |
More Detail: | N-Channel 100V 160A (Tc) 430W (Tc) Surface Mount T... |
DataSheet: | IXTA160N10T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.03767 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 430W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA160N10T, is a depletion-mode power MOSFET chip from IXYS. It has high cell density, low on-resistance, low gate threshold voltage, and low input capacitance. It is an ideal choice for high efficiency, low power applications. It is widely used in power electronics, power conversion, motor control, and other power control applications.
In depletion mode, IXTA160N10T operates as a switch. It is controlled by a voltage applied to its gate. When the gate is at a low voltage, the MOSFET is “on” and conducting current. When the gate is at a higher voltage, the MOSFET is “off” and not conducting current.
The benefits of using IXTA160N10T are that it has a low gate threshold voltage, which means it does not require a high voltage to be put into its gate to turn it on and off. It also has a low input capacitance, allowing it to switch quickly. The high cell density of the device makes it suitable for applications with high current density, such as motor control and power conversion.
IXTA160N10T is also suitable for DC-DC converters and regulators, as it is capable of handling large current spikes. It has a breakdown voltage of 160 volts and can handle peak gate currents up to 10 amps. Due to its high channel current, IXTA160N10T is able to handle larger voltages, allowing it to be used in high-voltage applications.
The IXTA160N10T has a low power dissipation and is thermally stable. This makes it suitable for applications where on-resistance must be kept low and energy efficiency is important. It also has a low gate-source capacitance, which is ideal for applications that require a fast switching device.
The IXTA160N10T can be used in a variety of circuits. It can be used as an insulated-gate field-effect transistor, as a switch, as an amplifier, and in voltage regulator circuits. It is also commonly used in motor control, power supply, and power converter applications.
In summary, IXTA160N10T is a high-efficiency, low-power depletion-mode MOSFET chip from IXYS. It has a low gate threshold voltage, low input capacitance, and high cell density. It is suitable for applications that require high current density and fast switching, such as motor control and power conversion. It can also be used in a variety of circuits, ranging from insulated-gate field-effect transistors to amplifiers and voltage regulator circuits.
The specific data is subject to PDF, and the above content is for reference
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