IXTA180N055T Allicdata Electronics
Allicdata Part #:

IXTA180N055T-ND

Manufacturer Part#:

IXTA180N055T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 180A TO-263
More Detail: N-Channel 55V 180A (Tc) Surface Mount TO-263 (IXT...
DataSheet: IXTA180N055T datasheetIXTA180N055T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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IXTA180N055T is a standard insulated-gate bipolar transistor or IGBT which is known for having useful features like ultrafast switching, short turn-off time, etc. It is widely used in power electronics and combines the features of both bipolar transistors and MOSFETs. It is suitable for inductive and capacitive loads, has high surge current capability, low on-state voltage drop, and low Miller-effect for improved efficiency. It is mainly used in switching and inverter applications, and in high frequency power switches.

The IXTA180N055T consists of multiple integral components, including two p-type MOS regions, two n-type MOS regions, two n+ doped regions, and two p+ doped regions. The two p-type MOS regions function as the input and output of the device. The two n-type MOS regions function as the gate oxide and provide insulation between the input and output. The two n+ doped regions provide the third terminal of the device, which is known as the collector.

The IXTA180N055T operates as both a field-effect and bipolar transistor. When a positive voltage is applied to the gate of the device, a thin inversion layer is formed across the gate oxide. This thin inversion layer allows the charge carriers to pass through the gate oxide when a sufficient voltage is applied. When this voltage is applied, the gate-to-source voltage increases, causing a redistribution of charge carriers between the gate and the source and creating a large gate-to-source current (i.e., the gate current).

The IXTA180N055T can be controlled by two types of signals: DC or AC. In DC control, the voltage applied to the gate is constant and the threshold voltage is the minimum gate voltage needed to turn the device on. In AC control, the gate voltage is continuously changed with respect to the source voltage and the conducting channel is determined electrically rather than thermally. Generally, AC control is used in switching situations where the on-to-off transition of the device needs to be as rapid as possible.

The IXTA180N055T can be used in controlled and/or switched power conversion applications. Typically, it is used to drive a bridge rectifier, where the device operates as a high-side switch. This application requires the device to have a high voltage rating, low on-state voltage drop, and a low turn-on resistance in order to minimize voltage drops across the device.It can also be used in switching power supplies, where it provides low on-state voltage drop and fast switching times. Additionally, the device is suitable for driving small motors and for controlling light-emitting diodes.

Due to its multifunctionality, the IXTA180N055T is a versatile and reliable device for low voltage analog, digital, and mixed signal designs. It has wide application in various types of power conversion and control circuits. With its high voltage rating, low-state voltage drop, low Miller-effect, and fast switching speed, the IXTA180N055T makes an ideal choice for power supply applications.

The specific data is subject to PDF, and the above content is for reference

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