Allicdata Part #: | IXTA180N10T7-ND |
Manufacturer Part#: |
IXTA180N10T7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 180A TO-263-7 |
More Detail: | N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount T... |
DataSheet: | IXTA180N10T7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | TO-263-7 (IXTA..7) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 151nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA180N10T7 is a high-performance field-effect transistor (FET) used in various electronic applications. It is a type of MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. This device is a type of single-gate MOSFET, which means that it has only one gate region between its drain and source, and it is capable of handling up to 10 amps of current. In addition, it has an operating voltage range of -25 to 85 volts and a breakdown voltage of 180 volts for breakdown protection.The IXTA180N10T7 is mostly used for switching applications due to its low power consumption and fast switching times. It can also be used as an amplifier and as a low-noise regulator. This device is especially useful in applications that require high speed and efficiency, such as in power supplies, motor control circuits, and audio amplifiers.The working principle of the IXTA180N10T7 involves the use of a voltage or current applied to its gate region to control the current flowing through its drain and source. When a voltage or current is applied to the gate of the device, a voltage-controlled electric field is created. This electric field controls the tiny leakage current between the source and drain. By adjusting the gate voltage or current, this leakage current can be changed, thus allowing for an accurate control of the amount of current flowing through the device.Another important factor to consider when using the IXTA180N10T7 is its safe operating area. Its safe operating area is a graph which indicates the device\'s power dissipation and its current-to-voltage (I-V) ratio, so that different scenarios of current, voltage, and temperature can be mapped. As the device will be exposed to various conditions, it is important to carefully adjust the I-V ratio to ensure that the device is not damaged due to excess power dissipation or voltage due to current surge.In conclusion, the IXTA180N10T7 is an excellent device for various electronic applications, especially those that require high speed, efficiency and reliable operation. Its low power consumption and fast switching capabilities make it ideal for switching applications, and its safe operating area graph helps ensure its safe operation in various conditions. It is also a good choice for amplification and regulating applications. With careful operation and maintenance, the IXTA180N10T7 can provide years of reliable performance.
The specific data is subject to PDF, and the above content is for reference
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