IXTA200N055T2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXTA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	360W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	109nC @ 10V
Series:	TrenchT2™
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	200A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTA200N055T2 Application Field and Working Principle

IXTA200N055T2 is a type of Insulated Gate Bipolar Transistor (IGBT) that is composed of three capacitors: a semiconductor substrate, a source and a drain. The purpose of this transistor is to provide efficient switching between DC and AC power without the need for current-limiting resistors or additional amplification devices.This type of IGBT is a unique transistor because it has the capacity to both switch on and off quickly, as well as providing high-current control capabilities in a very small footprint. The IXTA200N055T2 is built on an N-channel IGBT process, which combines a bipolar junction transistor with an insulated gate field-effect transistor.The IXTA200N055T2 is an excellent choice for applications that require high-speed switching, such as for home appliances, control circuits, and aircraft power supplies. It is also used in other aspects of industrial machinery and marine applications, and it is capable of delivering up to 100A peak current, making it perfect for powering motors or other high-power applications.The IXTA200N055T2 is powered by a 10V gate voltage and is able to withstand a maximum voltage of 600V and a maximum current of 150A. The nominal on-resistance of this IGBT is 0.065 Ω and the turn-on delay is typically 16μs.The IXTA200N055T2 works on the principle of applying a voltage to the insulated gate, which is then applied to the N-type channel in the transfer layer. This gives the device an enhanced threshold voltage, allowing it to be turned on and off like a switch. As the threshold voltage applied to the N-channel increases, the drag voltage also increases which results in a decrease of current drive. This ensures that the current handling capability of the transistor is kept under control.When the IXTA200N055T2 is used in a high-frequency power circuit, the gate current, drain current and source current must be maintained within the device\'s limits. To ensure that these currents remain within their limits, a series of resistors are placed in order to prevent any unwanted electrical occurrences. These resistors must be of the appropriate resistance to prevent any damage to the device.Overall, the IXTA200N055T2 is a useful device that offers efficient switching between AC and DC voltages, and it is suitable for a wide range of applications. Its small size and high-current capabilities make it a great choice for specialized applications such as motor control, high-frequency power circuits, and home appliances. Its on-resistance and turn-on delay are low, making it a great choice for high-speed switching applications.

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