IXTA200N085T7

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package:	TO-263-7 (IXTA..7)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	480W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	152nC @ 10V
Series:	TrenchMV™
Rds On (Max) @ Id, Vgs:	5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	200A (Tc)
Drain to Source Voltage (Vdss):	85V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IXTA200N085T7 is an insulated-gate field effect transistor (FET) known as an enhancement-mode metal-oxide semiconductor FET (MOSFET). Designed for a wide variety of applications, this FET is suited for outdoor use in harsh environments and is capable of operating at temperatures ranging from -55°C to +125°C. It is most commonly used for switching applications, such as gate drivers in logic circuits.The IXTA200N085T7 is a single-gate FET, meaning that it consists of only one gate terminal. The gate terminal is connected to a thin layer of silicon dioxide, which serves as an insulator between the gate and the body of the transistor. The gate is then connected to a source terminal and a drain terminal, which are connected to a P-type and N-type semiconductor, respectively. It is this P-N Junction that gives the FET its capabilities.When a voltage is applied to the gate terminal, electrons or “holes” are attracted or repelled from the P-N Junction. This creates an electric field which in turn modulates the resistance between the source and drain terminals. By adjusting the voltage of the gate terminal, the current that can flow between the source and drain can be regulated. This is known as “enhancement-mode action” and is what makes the IXTA200N085T7 suitable for use in many switching applications.The IXTA200N085T7 is designed to be used in a wide variety of applications. One of the most common is gate drivers in logic circuits. Gate drivers are used to control the magnitude of the voltage applied to the gate terminal. This allows the user to adjust the switching speed and power of the MOSFET. It is also used in analog and digital signal processing systems, such as audio amplifiers and TV sets. Additionally, the IXTA200N085T7 can be used in automotive, industrial, and consumer applications. Its wide temperature range and ability to operate in harsh environments make it suitable for use in automobiles, as well as in industrial machinery such as generators and compressors. Finally, it can be used in consumer electronics to control power supplies, such as those found in remote controls, speakers, and televisions.In summary, the IXTA200N085T7 is an insulated-gate field effect transistor (FET) designed for general switching applications. It is a single-gate FET, meaning that it consists of only one gate terminal. When a voltage is applied to the gate terminal, it modulates the resistance between the source and drain terminals, allowing the current to be regulated. This makes the IXTA200N085T7 suitable for a wide variety of applications, such as gate drivers in logic circuits, automated and digital signal processing systems, automotive and industrial machinery, and consumer electronics.

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