Allicdata Part #: | IXTA300N04T2-7-ND |
Manufacturer Part#: |
IXTA300N04T2-7 |
Price: | $ 3.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 40V 300A TO-263 |
More Detail: | N-Channel 40V 300A (Tc) 480W (Tc) Surface Mount TO... |
DataSheet: | IXTA300N04T2-7 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.85277 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | TO-263-7 (IXTA..7) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 300A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA300N04T2-7 is a high-performance N-channel vertical double-diffused metal oxide semiconductor field effect transistor (MOSFET). This transistor combines a robust design with high speed operation and power efficiency in a single package. It is suitable for a variety of applications, such as power supply management, low-power DC-DC converters and general-purpose switching amplifiers.
The IXTA300N04T2-7 is a vertical double-diffused MOSFET that is constructed with two distinct layers. The first layer is a source connection, and the second layer is a gate connection. The two layers are then separated by the dielectric layer, which is typically made of silicon dioxide. The source and gate connections in the IXTA300N04T2-7 are both formed from doped silicon and are highly conductive. This MOSFET has a drain current rating of 300 mA, a drain-source voltage of 30 V, and a threshold voltage of 4 V.
The working principle of an IXTA300N04T2-7 is based on its ability to control the voltage and current flow between the source and drain. This is accomplished by using the gate to modulate the channel resistance. When a voltage signal is applied to the gate, the resulting electric field induces a channel in the semiconductor material, which in turn increases the conductivity between the source and drain. By modulating the channel resistance, the IXTA300N04T2-7 can be used to regulate the amount of current that can pass between the source and the drain.
The IXTA300N04T2-7 is well suited for use in applications such as DC-DC converters, low-power amplifiers, and power management systems. In DC-DC converters, the IXTA300N04T2-7 can be used as a switch to rapidly switch the power supply between two different voltages. In low-power amplifiers, the IXTA300N04T2-7 can be used to control the gain of the amplifier. In power management systems, the IXTA300N04T2-7 can be used to reduce the current draw from the power supply, thus increasing the efficiency of the system.
The use of the IXTA300N04T2-7 for these applications is due to its high speed operation and efficient power consumption. With its fast switching speed, the IXTA300N04T2-7 can control the output current and voltage with precision while consuming only minimal power. Additionally, the IXTA300N04T2-7 is able to operate in temperatures ranging from -55°C to 175°C with only a minor change in electrical characteristics.
In conclusion, the IXTA300N04T2-7 is a high-performance N-channel MOSFET that is suitable for a variety of applications, such as DC-DC converters, low-power switching amplifiers, and power management systems. It has a high drain current rating, a low drain-source voltage, and a low threshold voltage. Its high switching speed and efficient power consumption make it well suited for these applications.
The specific data is subject to PDF, and the above content is for reference
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