IXTA340N04T4-7

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package:	TO-263-7
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	480W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	13000pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	256nC @ 10V
Series:	TrenchT4™
Rds On (Max) @ Id, Vgs:	1.7 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	340A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTA340N04T4-7 are one type of MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) which are commonly used as electronic switches in power control applications. Unlike BJT (Bipolar Junction Transistor), the output of this type of transistors are voltage-controlled. It is also known as a voltage-mode device, as its operation is based on the gate-drain voltage.IXT340N04T4-7 can be used in power control applications such as motor control, lighting control, battery protection, high side and low side driving, and audio amplifying. This type of transistor is capable of controlling up to 7A DC current and voltage up to 40V. It also offers fast switching with its low gate-turn-on voltage and reverse-recovery time.The main working principle of IXTA340N04T4-7 is based on electrostatic field effect. The source is the current source and the drain is the current sink. The voltage applied between the source and the gate determines the amount of current flowing from the source to the drain. This is because the voltage applied between the gate and the source creates an electric field, which attracts electrons to the gate and then further to the drain, resulting in current flowing from the source to the drain.The IXTA340N04T4-7 can be used as a switch in a power-control circuit by controlling the amount of current flowing from the source to the drain. When the gate voltage is low, i.e. there is no voltage or a negative voltage applied to the gate, the MOSFET is in the off-state. In this state, no current flows between the source and the drain. When a positive voltage is applied to the gate, the MOSFET goes into the on-state and current flows between the source and the drain. This is known as the saturation mode, as the transistor is said to have been saturated with positive charge when the gate voltage is positive.The IXTA340N04T4-7 also features low input and output capacitances, which eliminates the noise usually associated with biasing. This type of MOSFET is also capable of withstanding temperatures up to 150⁰C, making it suitable for higher temperature applications.The IXTA340N04T4-7 is one of the best solutions for power control applications due to its low-gate turn-on voltage, low on-state resistance, low input and output capacitance, wide voltage and current range, and ability to withstand high temperatures. It is a highly reliable and cost-effective option for controlling voltage and current in power-control circuits.

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