IXTA56N15T

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXTA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2250pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	TrenchHV™
Rds On (Max) @ Id, Vgs:	36 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	56A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The IXTA56N15T is a field-effect transistor (FET) found commonly in multiple applications across many industries. It is a single FET, part of a long line of enhanced power MOSFETs available at IXYS Corporation, the leading provider of power semiconductors. IXYS’ products are often featured in missions of exploration, from the automotive industry to space and military engineering, making their FETs a reliable option for various demanding applications.

Application Fields

The IXTA56N15T FET is used in various applications across many sectors. It is designed for delivery of high-current power loads in an efficient and reliable manner. In the automotive and aerospace industry, the transistor is often used in engines, onboard power supplies, and entertainment systems. In the industrial and automation sector, this single FET may be used in robotics, factory and industrial automation, hi-tech machines, and precise and accurate processes. In power supplies and control systems, the IXTA56N15T FET can be used in power converters and power supplies, as well as circuit protection systems.

Working Principle

The IXTA56N15T Single MOSFET is an enhancement-mode power MOSFET designed for applications involving high-current power delivery. The FET features a low on-resistance and gate-source threshold voltage, enabling it to deliver higher current than its counterparts. It is a voltage-controlled device, meaning it operates based on the potential difference between its two most important components: the gate and the source.When the carrier reaches a potential difference of V_GS (the threshold voltage), the FET transistors are open and shut, allowing the current to flow through and creating an active region. During this period, power is sent to the drain, passing through the channel created in the substrate by the bias of the gate-source junction and passing through the body.The IXTA56N15T has a true Avalanche energy rating, which indicates its capability to handle spikes in current, such as those caused by short-circuiting, EMI, and inductive loads. It is also capable of constant on-state current with minimal temperature rise, making it well-suited for high-power switching applications.

Conclusion

The IXTA56N15T is a single FET from IXYS Corporation designed for high-current power delivery. It has a low on-resistance and gate-source threshold voltage, enabling it to handle high-frequency applications while maintaining impressive efficiency. The FET is widely used in various applications such as automotive and aerospace, industrial and automation, and power supplies and control systems. Its true Avalanche energy rating and constant on-state current capabilities make it a great choice for applications involving high current load transport.

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