IXTA90N15T

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The IXTA90N15T is a n-channel power MOSFET designed for high power applications such as power amplifiers, DC-DC converters, switching DC/DC converters, motor control and other power switching tasks. It is a source follower MOSFET with a very low on-state resistance, making it ideal for high current applications.

The IXTA90N15T is a single, lateral, high-voltage MOSFET. It has a drain-source voltage of 90V, a maximum drain current of 15A, and a maximum power dissipation of about 500W. Thanks to its low on-state resistance, the IXTA90N15T is capable of operating at very high frequencies. Its body diode also has a low reverse leakage current, allowing for a smaller heat sink.

The IXTA90N15T offers a number of advantages, including excellent switching speeds and high reliability. Its source-drain isolation also makes it ideal for applications where the FET needs to be regularly replaced. Thanks to its lateral construction, the IXTA90N15T also has the added benefit of having a higher voltage handling than its vertical counterpart.

The IXTA90N15T has a typical gate-source threshold voltage of 3V. This means that the FET can be driven using low-voltage control signals. In addition, the IXTA90N15T is a Field-Effect Transistor (FET) with no bulk effect – meaning that the drain-source resistance of the FET will not be affected by gate-source bias voltage.

The IXTA90N15T can be used for a wide range of applications, including switching power supplies, motor speed controllers, and solid state relays. It is also used for radio-frequency (RF) power amplifiers and linear regulators. In addition, it can be used in industrial and automotive applications, due to its high-temperature operation.

The working principle of a MOSFET is based on the principle of two conducting channels formed between the source and the drain when the gate is biased. When the gate is not biased, the MOSFET is in an ‘off’ state, blocking the passage of the source-drain current. However, when the gate is biased, it creates an electric field, which modulates the shape of the conducting channels, thus allowing current to flow from the source to the drain.

In conclusion, the IXTA90N15T is a single, n-channel MOSFET designed for high power applications. Its low on-state resistance, excellent switching speeds, and temperature operation make it an ideal choice for a wide range of applications. It is a source follower FET with a typical gate-source threshold voltage of 3V and no bulk effect.

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