JAN2N2484UA Allicdata Electronics
Allicdata Part #:

1086-20733-ND

Manufacturer Part#:

JAN2N2484UA

Price: $ 14.74
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 60V 0.05A
More Detail: Bipolar (BJT) Transistor NPN 60V 50mA 360mW Surfa...
DataSheet: JAN2N2484UA datasheetJAN2N2484UA Datasheet/PDF
Quantity: 1000
100 +: $ 13.39310
Stock 1000Can Ship Immediately
$ 14.74
Specifications
Series: Military, MIL-PRF-19500/376
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Power - Max: 360mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA
Description

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Transistors - Bipolar (BJT) - Single

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit.A JAN2N2484UA transistor is an example of this type of electronic component, and it is a type of NPN transistor. This NPN transistor is a general-purpose device with a variety of applications, including amplification and switching.

What is a JAN2N2484UA Transistor?

The JAN2N2484UA is an NPN transistor, which stands for "negative positive negative". This type of transistor is made of a heavily doped semiconductor material and contains two P-type layers and one N-type layer. The P-type layers are made of either silicon or germanium while the N-type layer is made of either boron, phosphorus, or arsenic.

Applications of JAN2N2484UA Transistor

A JAN2N2484UA transistor is mainly used in audio-frequency and low-frequency applications. It can be used as an amplifier, as well as for switching applications. It is also used for battery-powered circuits, as it is highly efficient in low-power applications. The JAN2N2484UA transistor is widely used in circuits where low-power transistors are required, as they offer good high current gain and low noise levels.

Working Principle of JAN2N2484UA Transistor

The transistor’s working principle is based on the N-P-N region of the transistor which is constructed from two heavily doped P layers and one N layer. The two P layers are referred to as the base and the collector and the N layer is called the emitter. The voltage and current applied on to the transistor switches the current flow from the base to the collector, which is referred to as the current amplification.

When the current is applied on to the base terminal, the voltage between N and P region increases and the flow of electrons from the emitter to collector increases. This increases the current gain which is the ratio of output current to the input current. Depending on the applied voltage, the transistor is operated in either the saturation region or cut-off region. The larger the current gain the better it is for small signal application.

Conclusion

In conclusion, the JAN2N2484UA is a type of NPN transistor which is used for low-frequency and audio-frequency applications. It offers good high current gain and low noise levels, making it ideal for use in battery-powered circuits. Its working principle is based on the N-P-N region where applying a current to its base switches the current flow from the base to the collector, resulting in a current amplification.

The specific data is subject to PDF, and the above content is for reference

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