Allicdata Part #: | 1086-2330-ND |
Manufacturer Part#: |
JAN2N2484UB |
Price: | $ 11.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 60V 0.05A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 50mA 360mW Surfa... |
DataSheet: | JAN2N2484UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 10.71530 |
Series: | Military, MIL-PRF-19500/376 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 2nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 225 @ 10mA, 5V |
Power - Max: | 360mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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JAN2N2484UB is a Bipolar Junction Transistor (BJT) designed for a multitude of applications. It is a type of single transistor which has three connections, referred to as emitter, base and collector. It is used in amplifying and switching circuits and has a maximum collector-emitter voltage of 45 Volts with a maximum collector current of 1 Amp. It has a collector-base breakdown voltage of 60 Volts and can provide a maximum power dissipation of 625 MWA.
The main function of the transistor is to act as an amplifier and switch, but it can also be used in many other applications. Its ability to switch on and off current to the collector-emitter junction makes it an ideal choice for applications such as sound amplifiers, current sources, switching circuits and even motor controllers. It also has an advantages of having low power consumption, fairly high current and voltage gain and can operate at quite low noise levels.
In terms of operation, the JAN2N2484UB transistor works by controlling the flow of current between its collector and emitter leads. The current flow is completely dependent on the amount of current that is flowing through the base. When a small current is passed through the base lead, it will activate the emitter-base junction and allow electrons to flow from the emitter to the collector. This will then allow current to flow through the collector-emitter junction and thus turn the transistor on. Conversely when current flow stops at the base, it will deactivate the junction and stop current from flowing from the emitter to the collector. This will turn the transistor off.
The voltage gain of the JAN2N2484UB transistor is determined by the ratio of the collector current to the base current. This can be expressed as the hfe parameter. The higher the hfe value, the higher the voltage gain. It is important to note that the hfe is also dependent on the collector current as well as the base current.
The JAN2N2484UB transistor has a number of characteristics that make it attractive for many applications. It has a low gate-source capacitance and a maximum gate-source voltage of 10 Volts. It can also be used in very low power circuits and has the ability to turn on and off quickly. Finally, the JAN2N2484UB transistor is relatively inexpensive compared to many other types of transistors.
The JAN2N2484UB is a versatile and highly capable transistor, which is suitable for a wide range of applications including amplifying and switching circuits. It has a low gate-source capacitance, a maximum gate-source voltage of 10 Volts, low power consumption and an hfe value for a high voltage gain. Its ability to turn on and off quickly also makes it suitable for short term applications such as motor controllers and sound amplifiers.
The specific data is subject to PDF, and the above content is for reference
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