JAN2N4261UB

Series:	Military, MIL-PRF-19500/511
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	30mA
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 1V
Power - Max:	200mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, No Lead
Supplier Device Package:	UB

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The JAN2N4261UB is a general purpose bipolar junction transistor (BJT) that is used for a wide variety of applications. It is a single-stage, NPN transistor with a maximum collector current of 0.5 A, making it an ideal choice for low-to-medium power applications. The device also provides high frequency response and fast switching.

Application Fields

The JAN2N4261UB is suitable for use in many common applications, including:

• Power switching and amplifying
• Driver circuits
• AC/DC conversion
• Medium power audio amplifier
• Instrumentation amplifiers
• Voltage regulator circuits
• Relay drivers.

The device is particularly well suited for use as high-speed switches due to its fast switching capabilities. It is also well suited for use in applications that require high levels of voltage and current stability, such as audio amplifiers and instrumentation amplifiers, due to its high frequency response.

Working Principle

The JAN2N4261UB is an NPN BJT, meaning that it contains three layers. The first layer consists of the emitter, which is the part of the device that emits electrons. The second layer consists of the base, which is the layer between the emitter and the collector that acts as a control element. And the third layer is the collector, which is the layer that collects the electrons from the emitter and passes them along.When a voltage is applied to the JAN2N4261UB, it causes the emitter to release electrons, which then pass through the base and are collected by the collector. The collector current is proportional to the current flowing through the base. This process can be used to amplify signals, since the voltage applied to the base will cause a greater change in the collector current than the input current applied to the base. The JAN2N4261UB also features a cutoff mode, where the collector current is nearly zero. This is useful for switching applications, as it allows the user to effectively switch the device off.

Conclusion

The JAN2N4261UB is a versatile general purpose BJT that is well suited for a variety of applications. Its fast switching capabilities make it ideal for high-speed switching applications, while its high frequency response makes it suitable for audio and instrumentation amplifiers. The cutoff mode is also useful for switching applications, as it allows the user to effectively switch the device off. This makes the JAN2N4261UB a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description