Allicdata Part #: | MCH6437-TL-W-ND |
Manufacturer Part#: |
MCH6437-TL-W |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 7A MCPH6 |
More Detail: | N-Channel 20V 7A (Ta) 1.5W (Ta) Surface Mount SC-8... |
DataSheet: | MCH6437-TL-W Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10983 |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | SC-88FL/MCPH6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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MCH6437-TL-W is single MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is a type of field-effect transistor (FET) used for applications like amplifier, driver and low-frequency switch. It is a moderately high power and uses high frequency switching technology to achieve its operating capabilities. The MCH6437-TL-W provides low input capacitance and high performance. It is designed with an N-channel and uses a high voltage trench gate as the switch gate.The MCH6437-TL-W is an ideal choice for applications with high power efficiency and high speed operation. It is used in applications such as amplifiers, drivers, and low-frequency switches. It has a high speed response time of approximately 500 ns, which ensures that it can be used to minimize switching losses in high power and high frequency applications. The main features of MCH6437-TL-W include: high speed switching and low power consumption, low input capacitance and output resistance, and excellent heat dissipation characteristics.The working principle of the MCH6437-TL-W is based on a field-effect transistor (FET) structure. This type of transistor consists of two semiconductor material layers: source region and drain region. It also contains a conducting channel running between the two regions, which acts as an insulation barrier between the two regions. The voltage applied to the gate (G) controls the current flow through the channel. When a voltage is applied to the gate, it attracts carriers from the source to the drain region. This creates a conducting channel that allows current flow through it. The amount of current flowing through the channel is determined by the amount of voltage applied.The MCH6437-TL-W is also designed to have a variety of features to improve its performance. It has high-tolerance to thermal shock, which maximizes its lifetime and improves its durability. It also has a wide range of operating voltages and operating temperature, which allows it to be used in a variety of applications. Furthermore, it has double-sided arrangement of semiconductor layers and improved control signal structure which improves the signal integrity of the device and makes it ideal for high frequency applications.In conclusion, the MCH6437-TL-W is a single MOSFET transistor device that is ideal for high power and high frequency applications. It is designed with an N-channel, and it has a high speed response time of 500 ns. It also has a variety of features that make it suitable for a wide range of applications. The working principle is based on a FET structure, and it is controlled by the voltage applied to the gate. The MCH6437-TL-W is an excellent choice for applications that require high power efficiency and high speed operation.
The specific data is subject to PDF, and the above content is for reference
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