Allicdata Part #: | MCH6431-TL-H-ND |
Manufacturer Part#: |
MCH6431-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 5A MCPH6 |
More Detail: | N-Channel 30V 5A (Ta) 1.5W (Ta) Surface Mount 6-MC... |
DataSheet: | MCH6431-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MCPH |
Package / Case: | 6-SMD, Flat Leads |
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MCH6431-TL-H is an advanced MOSFET developed by ON Semiconductor. It allows high efficiency switch and level-shift functions in a single package. This MOSFET is designed for applications in high-voltage, high-accuracy systems. This device is a single-pole double-throw (SPDT) N-channel MOSFET. It is particularly useful in low-noise applications, as its high breakdown voltage and low on-state resistance reduce electrical noise and interference. The MCH6431-TL-H has a drain-source voltage range of up to 500V and an allowable gate-source voltage of +/- 15V.
The MCH6431-TL-H is an ideal component for motor control applications, as it has high speed switching capabilities and can be operated in both switching and linear modes. It is also often used in audio applications, as its low on-state resistance provides low-noise operation. Additionally, the device can be used in power distributed architecture applications, such as in solar power inverters and server networks.
MCH6431-TL-H works by utilizing the Flow Through Technology (FTT) MOSFET structure. This structure allows the device to have low on-state resistance, as well as low input capacitance. The FTT structure also allows for low driving power, which reduces energy consumption. The device has a latch-up immunity which ensures the safe operation of the device. Additionally, the device has an integrated reverse-blocking diode, which protects the device from damage due to unexpected power surges and reverse currents.
MCH6431-TL-H is an advanced MOSFET which offers high efficiency switch and level-shift capabilities in a single package. Its high-voltage and low-noise characteristics make it an ideal choice for motor control, audio, and power distributed architecture applications. This device utilizes the Flow Through Technology (FTT) MOSFET structure to reduce energy consumption, while providing low on-state resistance and low input capacitance. Additionally, the integrated reverse-blocking diode provides protection from unexpected power surges and reverse currents.
The specific data is subject to PDF, and the above content is for reference
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