MCH6661-TL-W Allicdata Electronics
Allicdata Part #:

MCH6661-TL-WOSTR-ND

Manufacturer Part#:

MCH6661-TL-W

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 1.8A SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 1.8A 800mW Sur...
DataSheet: MCH6661-TL-W datasheetMCH6661-TL-W Datasheet/PDF
Quantity: 6000
3000 +: $ 0.10316
Stock 6000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SC-88FL/MCPH6
Description

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The MCH6661-TL-W is a MOSFET array integrated circuit (IC) of Fairchild Semiconductor. It consists of four N-channel enhancement mode power MOSFETs arranged in a single monolithic strong back-gate drive structure.

This IC offers many benefits such as enhanced ESD protection and lightning protection, robustness against overload voltage, low gate charge and low output gate impedance. It can operate at voltages up to 10V and possesses an output drain current of 4A. It also has a maximum power dissipation of 25W.

The MCH6661-TL-W can be used as switch for either high power or low power applications. It can also be used for power conversion, motor control and switching operations in various consumer and industrial devices. It can also be used as a driver for high power actuators, motor control and other applications that require high switching speed.

The MCH6661-TL-W is available in two different package types. The TO-220 is mostly used in standard level packages and the TO-263 is mainly employed in precision level packages. The power transistor array used in the device provides very fast switching capability and improved EMI performance.

The MCH6661-TL-W works on the principle of N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) operation. It is constructed from four N-channel MOSFETs with separate gate protection circuits. These transistors are connected in parallel and have a common source connection. When a voltage is applied to the gate, the channel between the source and drain is opened, allowing current to flow between them. The current can be varied by varying the gate voltage.

The output impedance of MCH6661-TL-W is low, which allows it to achieve high switching speed. Its high current carrying ability improves the battery life of devices that use the IC. Its low gate charge reduces the amount of energy needed to drive the MOSFET which makes it more efficient. Its robustness against overload voltage ensures that the device is protected even under harsh application conditions.

The array arrangement of the MCH6661-TL-W provides improved EMI characteristics which reduce electromagnetic interference and keep the circuit noise under control. It also offers enhanced ESD protection against electrostatic discharge. Its rugged build makes it suitable for industrial applications as well as consumer and commercial applications.

In conclusion, the MCH6661-TL-W is an advanced and highly capable MOSFET array IC which offers superior power performance and enhanced switching capability. It can be used in both low and high power applications and offers robust and versatile performance for a wide range of systems. The integrated circuitry and specialized packages makes it reliable and efficient for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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