MMBF0201NLT1

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1 Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:	2.4V @ 250µA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	45pF @ 5V
FET Feature:	--
Power Dissipation (Max):	225mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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MMBF0201NLT1 Application Field and Working Principle

MMBF0201NLT1 is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) packaged in a small, plastic package. The MMBF0201NLT1 is intended for use in low-voltage analog and digital signal processing applications in the miniaturized mechanical packages. The MMBF0201NLT1 is particularly suited for high-speed switching applications, such as in high-frequency communications systems and also for power management applications, including DC/DC converters and motor controllers. The MMBF0201NLT1 is a N-channel MOSFET available in two distinct variations. The first variation is a small package (20-terminal MAXI) that offers great performance characteristics such as low noise, low On-resistance, and good reliability. The second variation is a large package (48-terminal MAXI) which also offers great performance characteristics, including low noise and low On-resistance.An MOSFET is a field effect transistor (FET) that is based on the principle of operation of a transistor. A FET is a three-terminal device of which the source, gate and drain terminals are connected in such a way as to form a bipolar junction transistor (BJT). The source and drain terminals of the transistor serve as the current carriers or conductors between the gate electrode and the channel portion of the semiconductor material. The gate electrode is used to control the current flow through the channel. It works by trapping charge in the channel and as this charge accumulates, resistance decreases which results in an increase in current flow. The MMBF0201NLT1 is constructed using two different materials, the first being a highly doped P-type material (the gate) and the second being an N-type material (the source and drain). The gate is connected to a source of voltage, typically between 3 volts and 20 volts which can be applied as either DC or AC voltage. The voltage applied to the gate determines the current flowing through the channel and thus the output current from the device. In summary, the MMBF0201NLT1 is a MOSFET-based field effect transistor (FET) that is used in high-speed switching applications and power management applications. It is available in two different packages, the MAXI 20-terminal package and the MAXI 48-terminal package, and offers great performance characteristics such as low noise, low on-resistance and good reliability. The MMBF0201NLT1 works by trapping charge in the channel and as this charge accumulates, resistance decreases which results in an increase in current flow. The gate voltage determines the current flowing through the channel and thus the output current from the device.

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